Datasheets
NDB6030PL by:

Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

Part Details for NDB6030PL by Fairchild Semiconductor Corporation

Overview of NDB6030PL by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for NDB6030PL

Part # Distributor Description Stock Price Buy
DISTI # 2156-NDB6030PL-ND
DigiKey 30A, 30V, 0.025OHM, P-CHANNEL, Min Qty: 307 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 10644
In Stock
  • 307 $0.9800
$0.9800 Buy Now
Rochester Electronics NDB6030 - Power Field-Effect Transistor, 30A, 30V, 0.025ohm, P-Channel, MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 10644
  • 1 $0.9898
  • 25 $0.9700
  • 100 $0.9304
  • 500 $0.8908
  • 1,000 $0.8413
$0.8413 / $0.9898 Buy Now

Part Details for NDB6030PL

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NDB6030PL Part Data Attributes

NDB6030PL Fairchild Semiconductor Corporation
Buy Now Datasheet
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NDB6030PL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 90 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDB6030PL

This table gives cross-reference parts and alternative options found for NDB6030PL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDB6030PL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -30A, 42mΩ, 800-REEL onsemi NDB6030PL vs NDB6030PL
NDB6030PLS62Z Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation NDB6030PL vs NDB6030PLS62Z
Part Number Description Manufacturer Compare
NDP6030PLJ69Z Power Field-Effect Transistor, 30A I(D), 30V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation NDB6030PL vs NDP6030PLJ69Z
DMP3028LK3-13 Power Field-Effect Transistor, 27A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Diodes Incorporated NDB6030PL vs DMP3028LK3-13
NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -30A, 42mΩ, 800-REEL onsemi NDB6030PL vs NDB6030PL
NDP6030PL Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation NDB6030PL vs NDP6030PL
NDB6030PLS62Z Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, Fairchild Semiconductor Corporation NDB6030PL vs NDB6030PLS62Z

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