There are no models available for this part yet.
Overview of NDB6060L by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 1 replacement )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 1 option )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for NDB6060L by onsemi
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
29X6825
|
Newark | Mosfet, N Channel, 60V, 48A, To-263Ab-3, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:48A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi NDB6060L RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
Buy Now | ||
|
DISTI #
26M1835
|
Newark | Mosfet Transistor, N Channel, 48 A, 60 V, 0.02 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi NDB6060L RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | ||
| Bristol Electronics | 1468 |
|
RFQ |
CAD Models for NDB6060L by onsemi
Part Data Attributes for NDB6060L by onsemi
|
|
|
|---|---|
|
Pbfree Code
|
Yes
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Part Life Cycle Code
|
End Of Life
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Ihs Manufacturer
|
ONSEMI
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Package Description
|
D2PAK-3
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Manufacturer Package Code
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418AJ
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Reach Compliance Code
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not_compliant
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ECCN Code
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EAR99
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Samacsys Manufacturer
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onsemi
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Additional Feature
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LOGIC LEVEL COMPATIBLE
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Avalanche Energy Rating (Eas)
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200 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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60 V
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Drain Current-Max (ID)
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48 A
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Drain-source On Resistance-Max
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0.025 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-263AB
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JESD-30 Code
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R-PSSO-G2
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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100 W
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Pulsed Drain Current-Max (IDM)
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144 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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Matte Tin (Sn) - annealed
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for NDB6060L
This table gives cross-reference parts and alternative options found for NDB6060L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDB6060L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB6060L | Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | NDB6060L vs NDB6060L |
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