Part Details for NDD02N40-1G by onsemi
Overview of NDD02N40-1G by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for NDD02N40-1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
72W2255
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Newark | Mosfet, N Channel, 400V, 1.7A, To-251Aa-3, Transistor Polarity:N Channel, Drain Source Voltage Vds:400V, Continuous Drain Current Id:1.7A, On Resistance Rds(On):4.5Ohm, Transistor Mounting:Through Hole, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Onsemi NDD02N40-1G Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for NDD02N40-1G
NDD02N40-1G CAD Models
NDD02N40-1G Part Data Attributes
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NDD02N40-1G
onsemi
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Datasheet
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NDD02N40-1G
onsemi
Power MOSFET 400V 1.7A 5.5 Ohm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | DPAK INSERTION MOUNT | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 4 | |
| Manufacturer Package Code | 369 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 39 W | |
| Pulsed Drain Current-Max (IDM) | 6.9 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |