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Transistors Power Field-Effect Transistors NDS9936

Transistors
NDS9936
Description: Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Overview of NDS9936 by Fairchild Semiconductor Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Motor control systems

Price & Stock for NDS9936 by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   4902
RFQ
Bristol Electronics   Min Qty: 9 1815
  • 9 $0.5625
  • 37 $0.3656
  • 138 $0.2109
  • 476 $0.1800
  • 1,029 $0.1575
$0.1575 / $0.5625 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 7335
  • 1 $1.5500
  • 1,291 $0.5425
  • 2,766 $0.4650
$0.4650 / $1.5500 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 1992
  • 1 $1.3620
  • 89 $0.4086
  • 490 $0.3541
$0.3541 / $1.3620 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 1920
  • 1 $1.5500
  • 259 $0.6200
  • 1,291 $0.5425
$0.5425 / $1.5500 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 1452
  • 1 $0.7500
  • 161 $0.2250
  • 890 $0.1950
$0.1950 / $0.7500 Buy Now
Rochester Electronics Power Field-Effect Transistor, 5A, 30V, 0.05ohm, 2-Element, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 30424
  • 1 $0.5915
  • 25 $0.5797
  • 100 $0.5560
  • 500 $0.5324
  • 1,000 $0.5028
$0.5028 / $0.5915 Buy Now

CAD Models for NDS9936 by Fairchild Semiconductor Corporation
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Part Data Attributes for NDS9936 by Fairchild Semiconductor Corporation
Parametric Data

NDS9936
Fairchild Semiconductor Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SOT
Package Description
SO-8
Pin Count
8
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
5 A
Drain-source On Resistance-Max
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
40 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. NDS9936
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
    VS

Alternate Parts for NDS9936

This table gives cross-reference parts and alternative options found for NDS9936. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9936, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSO303SPHXUMA1 Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG NDS9936 vs BSO303SPHXUMA1
PHN210T TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power NXP Semiconductors NDS9936 vs PHN210T
FY3ABJ-03 3A, 30V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, SOP-8 Renesas Electronics Corporation NDS9936 vs FY3ABJ-03
F5H3N Power Field-Effect Transistor, 5A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd NDS9936 vs F5H3N
BSO303SPH Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG NDS9936 vs BSO303SPH
PHN210 TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors NDS9936 vs PHN210
F4H3ND Power Field-Effect Transistor, 4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Shindengen Electronic Manufacturing Co Ltd NDS9936 vs F4H3ND
BSO305N Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Infineon Technologies AG NDS9936 vs BSO305N
FDS9953AD84Z Power Field-Effect Transistor, 2.9A I(D), 30V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation NDS9936 vs FDS9953AD84Z
HUF76113DK8T Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, PLASTIC, SO-8 Fairchild Semiconductor Corporation NDS9936 vs HUF76113DK8T

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