Datasheets
NDS9936 by:

5A, 30V, 0.05ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8

Part Details for NDS9936 by Rochester Electronics LLC

Overview of NDS9936 by Rochester Electronics LLC

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Part Details for NDS9936

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NDS9936 Part Data Attributes

NDS9936 Rochester Electronics LLC
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NDS9936 Rochester Electronics LLC 5A, 30V, 0.05ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, SO-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code SOT
Package Description SO-8
Pin Count 8
Reach Compliance Code unknown
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDS9936

This table gives cross-reference parts and alternative options found for NDS9936. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS9936, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MMSF4P01HDR2 4A, 12V, 0.09ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC NDS9936 vs MMSF4P01HDR2
NTMD4N03R2G 4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, MINIATURE, CASE 751-07, SOIC-8 Rochester Electronics LLC NDS9936 vs NTMD4N03R2G
HAT1026R Power Field-Effect Transistor, 7A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8 Hitachi Ltd NDS9936 vs HAT1026R
BSO303SP 8.9A, 30V, 0.021ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 Rochester Electronics LLC NDS9936 vs BSO303SP
HAT2092R Power Field-Effect Transistor, 11A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Hitachi Ltd NDS9936 vs HAT2092R
FW231A Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd NDS9936 vs FW231A
HAT1016R Power Field-Effect Transistor, 4.5A I(D), 30V, 0.18ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Hitachi Ltd NDS9936 vs HAT1016R
NTMD4N03R2 4A, 30V, 0.06ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MINIATURE, CASE 751-07, SOIC-8 Rochester Electronics LLC NDS9936 vs NTMD4N03R2
MMDF2P03HDR2 2A, 30V, 0.22ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, SO-8 Motorola Mobility LLC NDS9936 vs MMDF2P03HDR2
FY3ABJ-03 Power Field-Effect Transistor, 3A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric NDS9936 vs FY3ABJ-03

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