Datasheets
NDT3055L by:

N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ, 4000-REEL

Part Details for NDT3055L by onsemi

Overview of NDT3055L by onsemi

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Price & Stock for NDT3055L

Part # Distributor Description Stock Price Buy
DISTI # 26M1853
Newark Mosfet Transistor, N Channel, 4 A, 60 V, 0.07 Ohm, 10 V, 1.6 V Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 308
  • 1 $1.0500
  • 25 $0.8600
  • 50 $0.7640
  • 100 $0.6690
  • 250 $0.6180
  • 500 $0.5670
  • 1,000 $0.4620
  • 2,500 $0.4350
$0.4350 / $1.0500 Buy Now
DISTI # 23K8163
Newark Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V, Power Dissipation:3W Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 4,000 $0.3780
  • 8,000 $0.3680
$0.3680 / $0.3780 Buy Now
DISTI # 72K9001
Newark Mosfet, N Channel, 60V, 4A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $1.0500
  • 25 $0.8600
  • 50 $0.7640
  • 100 $0.6690
  • 250 $0.6180
  • 500 $0.5670
  • 1,000 $0.4620
  • 2,500 $0.4350
$0.4350 / $1.0500 Buy Now
DISTI # 04X6649
Newark Mosfet, N, 60V, Sot-223, Reel, Transistor Polarity:N Channel, Continuous Drain Current Id:4A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.07Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power Dissipation Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 4,000 $0.4240
  • 8,000 $0.4140
  • 16,000 $0.3950
$0.3950 / $0.4240 Buy Now
DISTI # 26AC2664
Newark 60V N-Fet 100 Mo Sot223 Rohs Compliant: Yes |Onsemi NDT3055L Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 4,000 $0.4170
$0.4170 Buy Now
DISTI # NDT3055L
Avnet Americas Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NDT3055L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.4144
  • 8,000 $0.4032
  • 16,000 $0.3920
  • 24,000 $0.3808
  • 32,000 $0.3696
  • 40,000 $0.3584
  • 400,000 $0.3472
$0.3472 / $0.4144 Buy Now
DISTI # NDT3055L
Avnet Americas Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NDT3055L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.4144
  • 8,000 $0.4032
  • 16,000 $0.3920
  • 24,000 $0.3808
  • 32,000 $0.3696
  • 40,000 $0.3584
  • 400,000 $0.3472
$0.3472 / $0.4144 Buy Now
Bristol Electronics   1050
RFQ
Rochester Electronics NDT3055L - FET 60V 1.0 Mohm Sot223 RoHS: Compliant Status: Active Min Qty: 1 9317
  • 1 $0.4425
  • 25 $0.4337
  • 100 $0.4160
  • 500 $0.3982
  • 1,000 $0.3761
$0.3761 / $0.4425 Buy Now
DISTI # NDT3055L
TME Transistor: N-MOSFET, unipolar, 60V, 4A, 3W, SOT223 Min Qty: 3 1352
  • 3 $0.8430
  • 25 $0.7240
  • 100 $0.5820
  • 500 $0.5220
  • 4,000 $0.4880
$0.4880 / $0.8430 Buy Now
Ameya Holding Limited   Min Qty: 5 10
  • 5 $1.1649
  • 1,000 $1.1402
  • 2,000 $1.1061
$1.1061 / $1.1649 Buy Now
ComSIT USA N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 430
RFQ
DISTI # NDT3055L
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 4000 0
  • 4,000 $0.3800
$0.3800 Buy Now
DISTI # SMC-NDT3055L
Sensible Micro Corporation Onsemi RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days 7
  • 100 $0.2592
  • 500 $0.2592
  • 1,000 $0.2592
$0.2592 RFQ
Chip 1 Exchange INSTOCK 15000
RFQ
DISTI # NDT3055L
Avnet Asia Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R (Alt: NDT3055L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days 8000
  • 4,000 $0.4000
  • 8,000 $0.3733
  • 12,000 $0.3636
  • 20,000 $0.3544
  • 40,000 $0.3457
  • 100,000 $0.3373
  • 200,000 $0.3294
$0.3294 / $0.4000 Buy Now
DISTI # NDT3055L
Avnet Silica Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R (Alt: NDT3055L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NDT3055L
EBV Elektronik Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SOT-223 T/R (Alt: NDT3055L) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 14 Weeks, 0 Days EBV - 16000
Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 1240
  • 1 $0.8600
  • 25 $0.6900
  • 100 $0.5200
$0.5200 / $0.8600 Buy Now
New Advantage Corporation NAND Gate, AC Series, 4-Func, 2-Input, CMOS, PDSO14 RoHS: Compliant Min Qty: 1 Package Multiple: 4000 12000
  • 4,000 $0.5919
  • 12,000 $0.5478
$0.5478 / $0.5919 Buy Now

Part Details for NDT3055L

NDT3055L CAD Models

NDT3055L Part Data Attributes

NDT3055L onsemi
Buy Now Datasheet
Compare Parts:
NDT3055L onsemi N-Channel Logic Level Enahncement Mode Field Effect Transistor 60V, 4A, 100mΩ, 4000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 318H-01
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 25 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NDT3055L

This table gives cross-reference parts and alternative options found for NDT3055L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT3055L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDT3055L/D84Z 3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 Texas Instruments NDT3055L vs NDT3055L/D84Z
NDT3055LL84Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055LL84Z
NDT3055LD84Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation NDT3055L vs NDT3055LD84Z
NDT3055LL99Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055LL99Z
NDT3055L Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055L
NDT3055S62Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055S62Z
NDT3055D84Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055D84Z
NDT3055L_NL Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055L_NL
NDT3055LTNR_NL Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-223, 4 PIN Fairchild Semiconductor Corporation NDT3055L vs NDT3055LTNR_NL
NDT3055L 4A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC NDT3055L vs NDT3055L
Part Number Description Manufacturer Compare
NDT3055_NL Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055_NL
NDT3055LL84Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055LL84Z
NDT3055LD84Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation NDT3055L vs NDT3055LD84Z
PJW4N06A-AU_R2_000A1 Power Field-Effect Transistor, PanJit Semiconductor NDT3055L vs PJW4N06A-AU_R2_000A1
DT3055 Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Lite-On Semiconductor Corporation NDT3055L vs DT3055
NDT3055LTNR_NL Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-223, 4 PIN Fairchild Semiconductor Corporation NDT3055L vs NDT3055LTNR_NL
NDT3055/J23Z 4A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET Texas Instruments NDT3055L vs NDT3055/J23Z
NDT3055L/D84Z 3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 Texas Instruments NDT3055L vs NDT3055L/D84Z
NDT3055S62Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055S62Z
NDT3055LL99Z Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation NDT3055L vs NDT3055LL99Z

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