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P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ, 4000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26M1854
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Newark | Mosfet Transistor, P Channel, 5 A, 30 V, 65 Mohm, -10 V, 1.6 V Rohs Compliant: Yes |Onsemi NDT452AP Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 67173 |
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$0.4240 / $0.9670 | Buy Now |
DISTI #
58K2023
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Newark | P Channel Mosfet, -30V, 5A, Sot-223, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Onsemi NDT452AP Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.5250 | Buy Now |
DISTI #
67R2133
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V, Power Dissipation:3W Rohs Compliant: Yes |Onsemi NDT452AP Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3530 / $0.4590 | Buy Now |
DISTI #
NDT452APCT-ND
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DigiKey | MOSFET P-CH 30V 5A SOT-223-4 Min Qty: 1 Lead time: 16 Weeks Container: Digi-ReelĀ®, Cut Tape (CT), Tape & Reel (TR) |
15872 In Stock |
|
$0.3475 / $0.9300 | Buy Now |
DISTI #
26M1854
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Avnet Americas | Trans MOSFET P-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 26M1854) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 26 Weeks, 4 Days Container: Ammo Pack | 736 |
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RFQ | |
DISTI #
NDT452AP
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Avnet Americas | Trans MOSFET P-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NDT452AP) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.3378 / $0.4032 | Buy Now |
DISTI #
NDT452AP
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Avnet Americas | Trans MOSFET P-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NDT452AP) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.3323 / $0.3977 | Buy Now |
DISTI #
NDT452AP
|
Avnet Americas | Trans MOSFET P-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: NDT452AP) RoHS: Compliant Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
512-NDT452AP
|
Mouser Electronics | MOSFET P-Channel FET Enhancement Mode RoHS: Compliant | 54 |
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$0.3640 / $0.9200 | Buy Now |
DISTI #
V72:2272_06305475
|
Arrow Electronics | Trans MOSFET P-CH 30V 5A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2409 Container: Cut Strips | Americas - 3500 |
|
$0.3732 / $0.9124 | Buy Now |
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NDT452AP
onsemi
Buy Now
Datasheet
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Compare Parts:
NDT452AP
onsemi
P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ, 4000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 318H-01 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 55 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5 A | |
Drain-source On Resistance-Max | 0.065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for NDT452AP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDT452AP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDT452APJ23Z | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Fairchild Semiconductor Corporation | NDT452AP vs NDT452APJ23Z |
BSP250/T3 | Power Field-Effect Transistor | Nexperia | NDT452AP vs BSP250/T3 |
BSP250T/R | TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power | NXP Semiconductors | NDT452AP vs BSP250T/R |
NDT456P | P-Channel Enhancement Mode Field Effect Transistor, 4000-REEL | onsemi | NDT452AP vs NDT456P |
NDT452AP/S62Z | 5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | Texas Instruments | NDT452AP vs NDT452AP/S62Z |
NDT456P_NL | Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT452AP vs NDT456P_NL |
NDT452APS62Z | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT452AP vs NDT452APS62Z |
BSP250,115 | BSP250 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin | Nexperia | NDT452AP vs BSP250,115 |
BSP250 | TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power | NXP Semiconductors | NDT452AP vs BSP250 |
NDT452APD84Z | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | NDT452AP vs NDT452APD84Z |