Part Details for NGTD23T120F2WP by onsemi
Overview of NGTD23T120F2WP by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for NGTD23T120F2WP
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
92Y3750
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Newark | 1200V/30A Cj52 Fast Igbt Unsawn Wafer Sales/Wjar |Onsemi NGTD23T120F2WP Min Qty: 99 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.0300 / $2.8900 | Buy Now |
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DISTI #
NGTD23T120F2WP-ND
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DigiKey | IGBT TRENCH FIELD STOP 1200V DIE Lead time: 56 Weeks Container: Bulk | Temporarily Out of Stock |
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Buy Now | |
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DISTI #
NGTD23T120F2WP
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Avnet Americas | Trans IGBT Chip N-CH 1.2KV 25A Bare DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: NGTD23T120F2WP) RoHS: Compliant Min Qty: 328 Package Multiple: 1 Container: Waffle Pack | 0 |
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RFQ | |
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DISTI #
NGTD23T120F2WP
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Avnet Silica | (Alt: NGTD23T120F2WP) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 57 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for NGTD23T120F2WP
NGTD23T120F2WP CAD Models
NGTD23T120F2WP Part Data Attributes
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NGTD23T120F2WP
onsemi
Buy Now
Datasheet
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Compare Parts:
NGTD23T120F2WP
onsemi
IGBT 1200V 25A FS2 bare die, 1-WJAR
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | DIE-2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 40 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUUC-N2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 2.2 V |