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Transistors Power Field-Effect Transistors NP109N055PUJ-E2B-AY

Transistors
NP109N055PUJ-E2B-AY
Description: Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape

Overview of NP109N055PUJ-E2B-AY by Renesas Electronics Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 4 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
NP109N055PUJ-E2B-AY Renesas Electronics Corporation Power MOSFETs for Automotive
NP109N055PUJ-E1B-AY Renesas Electronics Corporation Power MOSFETs for Automotive

CAD Models for NP109N055PUJ-E2B-AY by Renesas Electronics Corporation
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Part Data Attributes for NP109N055PUJ-E2B-AY by Renesas Electronics Corporation
Parametric Data

NP109N055PUJ-E2B-AY
Renesas Electronics Corporation
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Part Package Code
MP-25ZP
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Manufacturer Package Code
PRSS0004AL-A3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Renesas Electronics
Avalanche Energy Rating (Eas)
291 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
110 A
Drain-source On Resistance-Max
0.0032 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
220 W
Pulsed Drain Current-Max (IDM)
440 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. NP109N055PUJ-E2B-AY
    Renesas Electronics Corporation
    Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape
    VS

Alternate Parts for NP109N055PUJ-E2B-AY

This table gives cross-reference parts and alternative options found for NP109N055PUJ-E2B-AY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NP109N055PUJ-E2B-AY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NP109N055PUJ-E1B-AY Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape Renesas Electronics Corporation NP109N055PUJ-E2B-AY vs NP109N055PUJ-E1B-AY
NP110N04PDG-E1-AZ Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape Renesas Electronics Corporation NP109N055PUJ-E2B-AY vs NP110N04PDG-E1-AZ
NP109N055PUJ-E1B-AY Power Field-Effect Transistor, 110A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, MP-25ZP, TO-263, 3 PIN NEC Electronics Group NP109N055PUJ-E2B-AY vs NP109N055PUJ-E1B-AY
NP110N04PDG-E2-AZ 110A, 40V, 0.0032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, MP-25ZP, 3 PIN Renesas Electronics Corporation NP109N055PUJ-E2B-AY vs NP110N04PDG-E2-AZ

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