Part Details for NSVMUN5135DW1T1G by onsemi
Overview of NSVMUN5135DW1T1G by onsemi
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NSVMUN5135DW1T1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH9485
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Newark | Digital Transistor, 50V, 0.1A Rohs Compliant: Yes |Onsemi NSVMUN5135DW1T1G Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 3851 |
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$0.0700 / $0.3390 | Buy Now |
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DISTI #
68Y0592
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Newark | Dual Pnp Bipolar Digital Transistor (Brt)/ Reel Rohs Compliant: Yes |Onsemi NSVMUN5135DW1T1G Min Qty: 9000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0310 / $0.0420 | Buy Now |
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DISTI #
NSVMUN5135DW1T1GOSCT-ND
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DigiKey | TRANS 2PNP PREBIAS 50V SOT363-6 Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3000 In Stock |
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$0.0315 / $0.3200 | Buy Now |
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DISTI #
NSVMUN5135DW1T1G
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Avnet Americas | Trans Digital BJT PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSVMUN5135DW1T1G) RoHS: Compliant Min Qty: 8475 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 241350 Partner Stock |
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$0.0868 / $0.1036 | Buy Now |
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DISTI #
NSVMUN5135DW1T1G
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Avnet Americas | Trans Digital BJT PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSVMUN5135DW1T1G) RoHS: Compliant Min Qty: 21000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 241350 Factory Stock |
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$0.0298 / $0.0355 | Buy Now |
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DISTI #
863-NSVMUN5135DW1T1G
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Mouser Electronics | Digital Transistors SS SC88 BR XSTR PNP RoHS: Compliant | 2651 |
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$0.0310 / $0.3200 | Buy Now |
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Rochester Electronics | MUN5135DW1 - Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, PNP RoHS: Compliant Status: Active Min Qty: 1 | 225000 |
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$0.0298 / $0.0350 | Buy Now |
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DISTI #
NSVMUN5135DW1T1G
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Avnet Americas | Trans Digital BJT PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSVMUN5135DW1T1G) RoHS: Compliant Min Qty: 21000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 241350 Factory Stock |
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$0.0298 / $0.0355 | Buy Now |
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DISTI #
NSVMUN5135DW1T1G
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Avnet Americas | Trans Digital BJT PNP 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSVMUN5135DW1T1G) RoHS: Compliant Min Qty: 8475 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 241350 Partner Stock |
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$0.0868 / $0.1036 | Buy Now |
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ComSIT USA | DUAL PNP BIAS RESISTOR TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon RoHS: Compliant | Europe - 4840 |
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RFQ |
Part Details for NSVMUN5135DW1T1G
NSVMUN5135DW1T1G CAD Models
NSVMUN5135DW1T1G Part Data Attributes:
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NSVMUN5135DW1T1G
onsemi
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Datasheet
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NSVMUN5135DW1T1G
onsemi
Dual PNP Bipolar Digital Transistor (BRT) SS SC88 BR XSTR PNP 50V, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 419B-02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 31 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 21.36 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 80 | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.385 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.25 V |