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DDR DRAM, 256MX16, 0.225ns, CMOS, PBGA96, WBGA-96
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NT5CB256M16CP-DI by Nanya Technology Corporation is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
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NT5CB256M16CP-DI
Nanya Technology Corporation
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Datasheet
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NT5CB256M16CP-DI
Nanya Technology Corporation
DDR DRAM, 256MX16, 0.225ns, CMOS, PBGA96, WBGA-96
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
Package Description | TFBGA, BGA96,9X16,32 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Samacsys Manufacturer | Nanya | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.225 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 800 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 8 | |
JESD-30 Code | R-PBGA-B96 | |
Length | 13 mm | |
Memory Density | 4294967296 bit | |
Memory IC Type | DDR3 DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 96 | |
Number of Words | 268435456 words | |
Number of Words Code | 256000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 256MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA96,9X16,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 8 | |
Standby Current-Max | 0.018 A | |
Supply Current-Max | 0.3 mA | |
Supply Voltage-Max (Vsup) | 1.575 V | |
Supply Voltage-Min (Vsup) | 1.425 V | |
Supply Voltage-Nom (Vsup) | 1.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 9 mm |
This table gives cross-reference parts and alternative options found for NT5CB256M16CP-DI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5CB256M16CP-DI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
NT5CB256M16CP-DIH | Nanya Technology Corporation | Check for Price | DDR DRAM, 256MX16, 0.225ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-96 | NT5CB256M16CP-DI vs NT5CB256M16CP-DIH |
NT5CB256M16CP-DII | Nanya Technology Corporation | Check for Price | DDR DRAM, 256MX16, 0.225ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-96 | NT5CB256M16CP-DI vs NT5CB256M16CP-DII |