Datasheets
NT5CC128M16IP-DI by: Nanya Technology Corporation

DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, VFBGA-96

Part Details for NT5CC128M16IP-DI by Nanya Technology Corporation

Results Overview of NT5CC128M16IP-DI by Nanya Technology Corporation

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NT5CC128M16IP-DI Information

NT5CC128M16IP-DI by Nanya Technology Corporation is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for NT5CC128M16IP-DI

Part # Distributor Description Stock Price Buy
Win Source Electronics DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V 96-Pin VFBGA 36000
  • 17 $3.1090
  • 40 $2.5510
  • 61 $2.4710
  • 84 $2.3920
  • 109 $2.3120
  • 145 $2.0730
$2.0730 / $3.1090 Buy Now

Part Details for NT5CC128M16IP-DI

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NT5CC128M16IP-DI Part Data Attributes

NT5CC128M16IP-DI Nanya Technology Corporation
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NT5CC128M16IP-DI Nanya Technology Corporation DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, VFBGA-96
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NANYA TECHNOLOGY CORP
Package Description VFBGA, BGA96,9X16,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Samacsys Manufacturer Nanya
Access Mode MULTI BANK PAGE BURST
Access Time-Max 0.225 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 800 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B96
Length 13 mm
Memory Density 2147483648 bit
Memory IC Type DDR3L DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 128MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.012 A
Supply Current-Max 0.22 mA
Supply Voltage-Max (Vsup) 1.45 V
Supply Voltage-Min (Vsup) 1.283 V
Supply Voltage-Nom (Vsup) 1.35 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm

Alternate Parts for NT5CC128M16IP-DI

This table gives cross-reference parts and alternative options found for NT5CC128M16IP-DI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT5CC128M16IP-DI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NT5CC128M16IP-DIT Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, VFBGA-96 NT5CC128M16IP-DI vs NT5CC128M16IP-DIT
NT5CC128M16JR-DIB Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96 NT5CC128M16IP-DI vs NT5CC128M16JR-DIB
Part Number Manufacturer Composite Price Description Compare
NT5CC128M16JR-DI Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96 NT5CC128M16IP-DI vs NT5CC128M16JR-DI
NT5CC128M16JR-DII Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96 NT5CC128M16IP-DI vs NT5CC128M16JR-DII
NT5CC128M16IP-DIA Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, VFBGA-96 NT5CC128M16IP-DI vs NT5CC128M16IP-DIA
NT5CC128M16JR-DIT Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96 NT5CC128M16IP-DI vs NT5CC128M16JR-DIT
NT5CB128M16JR-DI Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96 NT5CC128M16IP-DI vs NT5CB128M16JR-DI
NT5CC128M16IP-DII Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, CMOS, PBGA96, VFBGA-96 NT5CC128M16IP-DI vs NT5CC128M16IP-DII
NT5CB128M16JR-DII Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, CMOS, PBGA96, TFBGA-96 NT5CC128M16IP-DI vs NT5CB128M16JR-DII
K4B2G1646Q-BMK00 Samsung Semiconductor Check for Price DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 NT5CC128M16IP-DI vs K4B2G1646Q-BMK00
K4B2G1646Q-BCK00 Samsung Semiconductor Check for Price DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96 NT5CC128M16IP-DI vs K4B2G1646Q-BCK00
NT5CB128M16IP-DIA Nanya Technology Corporation Check for Price DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, VFBGA-96 NT5CC128M16IP-DI vs NT5CB128M16IP-DIA

NT5CC128M16IP-DI Related Parts

NT5CC128M16IP-DI Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for NT5CC128M16IP-DI is 0°C to 95°C.

  • Yes, the NT5CC128M16IP-DI is RoHS (Restriction of Hazardous Substances) compliant, meaning it does not contain hazardous substances like lead, mercury, and cadmium.

  • The refresh interval for NT5CC128M16IP-DI is 7.8 μs (microseconds) at a temperature range of 0°C to 85°C.

  • No, the NT5CC128M16IP-DI is designed to operate at a voltage supply of 1.8V ± 0.1V. Using it with a different voltage supply may damage the module or affect its performance.

  • The minimum clock cycle time for NT5CC128M16IP-DI is 3.75 ns (nanoseconds).

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