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Transistors / Small Signal Field-Effect Transistors / NTA4153NT1G
Datasheets
NTA4153NT1G by:

Single N-Channel with ESD Protection Small Signal MOSFET 20V, 915mA, 230mΩ, SC-75 (SOT-416) 3 LEAD, 3000-REEL

Part Details for NTA4153NT1G by onsemi

Results Overview of NTA4153NT1G by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

NTA4153NT1G Information

NTA4153NT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTA4153NT1G

Part # Distributor Description Stock Price Buy
DISTI # 90W9301
Newark Mosfet, N-Ch, 20 V, 0.915 A, Sc-75-3, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:915Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:760Mv Rohs Compliant: Yes |Onsemi NTA4153NT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 48
  • 1 $0.2590
  • 10 $0.1770
  • 25 $0.1500
  • 50 $0.1220
  • 100 $0.0950
  • 250 $0.0920
  • 500 $0.0900
  • 1,000 $0.0870
$0.0870 / $0.2590 Buy Now
DISTI # 45J2084
Newark N Channel Mosfet, 20V, 915Ma, Sc-75, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:915Μa, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:300Mw Rohs Compliant: Yes |Onsemi NTA4153NT1G RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.0600
  • 12,000 $0.0570
  • 18,000 $0.0560
  • 30,000 $0.0550
$0.0550 / $0.0600 Buy Now
DISTI # NTA4153NT1G
Avnet Americas Trans MOSFET N-CH 20V 0.915A 3-Pin SOT-416 T/R - Tape and Reel (Alt: NTA4153NT1G) RoHS: Compliant Min Qty: 16667 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 219000 Partner Stock
  • 16,667 $0.0392
  • 17,000 $0.0362
  • 34,000 $0.0357
  • 84,000 $0.0355
  • 170,000 $0.0353
$0.0353 / $0.0392 Buy Now
DISTI # NTA4153NT1G
Avnet Americas Trans MOSFET N-CH 20V 0.915A 3-Pin SOT-416 T/R - Tape and Reel (Alt: NTA4153NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel 114000 Factory Stock
  • 3,000 $0.0443
  • 6,000 $0.0437
  • 12,000 $0.0432
  • 18,000 $0.0430
  • 24,000 $0.0427
$0.0427 / $0.0443 Buy Now
Bristol Electronics   1805
RFQ
Bristol Electronics   Min Qty: 20 165
  • 20 $0.2625
  • 59 $0.1313
$0.1313 / $0.2625 Buy Now
DISTI # NTA4153NT1G
TME Transistor: N-MOSFET, unipolar, 20V, 0.915A, 0.3W, SC75, ESD Min Qty: 1 3870
  • 1 $0.3090
  • 10 $0.1950
  • 50 $0.1420
  • 100 $0.1240
  • 500 $0.0910
  • 1,000 $0.0800
  • 3,000 $0.0660
  • 6,000 $0.0640
$0.0640 / $0.3090 Buy Now
Ameya Holding Limited Single N-Channel 20 V 950 mOhm 1.82 nC 300 mW Silicon SMT Mosfet - SC-75-3 21000
RFQ
ComSIT USA SMALL SIGNAL MOSFET Small Signal Field-Effect Transistor, 0.915A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock DE - 1975
Stock ES - 2411
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # NTA4153NT1G
IBS Electronics Single N-Channel with ESD Protection Small Signal MOSFET 20V, 915mA, 230m Min Qty: 3000 Package Multiple: 1 3000
  • 3,000 $0.0910
$0.0910 Buy Now
DISTI # NTA4153NT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 15000 0
  • 15,000 $0.0500
$0.0500 Buy Now
Chip 1 Exchange INSTOCK 3
RFQ
DISTI # NTA4153NT1G
Avnet Asia Trans MOSFET N-CH 20V 0.915A 3-Pin SOT-416 T/R (Alt: NTA4153NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days 6000
  • 3,000 $0.1071
  • 6,000 $0.1000
  • 9,000 $0.0974
  • 15,000 $0.0949
  • 30,000 $0.0926
  • 75,000 $0.0904
  • 150,000 $0.0882
$0.0882 / $0.1071 Buy Now
DISTI # NTA4153NT1G
Avnet Silica Trans MOSFET N-CH 20V 0.915A 3-Pin SOT-416 T/R (Alt: NTA4153NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days Silica - 0
Buy Now
CHIPMALL.COM LIMITED 20V 915mA 300mW 230m@4.5V,600mA 1.1V@250uA 1 N-Channel SC-75SOT-523 MOSFETs ROHS 3577
  • 5 $0.1066
  • 50 $0.0873
  • 150 $0.0765
  • 500 $0.0701
  • 3,000 $0.0645
  • 6,000 $0.0615
$0.0615 / $0.1066 Buy Now
DISTI # NTA4153NT1G
EBV Elektronik Trans MOSFET N-CH 20V 0.915A 3-Pin SOT-416 T/R (Alt: NTA4153NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 219000
RFQ
LCSC 20V 915mA 300mW 230m4.5V600mA 1.1V250uA 1 N-channel SC-75(SOT-523) MOSFETs ROHS 3627
  • 5 $0.1110
  • 50 $0.0909
  • 150 $0.0797
  • 500 $0.0730
  • 3,000 $0.0672
  • 6,000 $0.0641
$0.0641 / $0.1110 Buy Now
New Advantage Corporation Single N-Channel 20 V 950 mOhm 1.82 nC 300 mW Silicon SMT Mosfet - SC-75-3 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 480000
  • 3,000 $0.0611
  • 480,000 $0.0571
$0.0571 / $0.0611 Buy Now
Win Source Electronics MOSFET N-CH 20V 915MA SOT-416 303870
  • 1,530 $0.0327
  • 3,270 $0.0306
  • 5,070 $0.0296
  • 7,275 $0.0275
  • 9,470 $0.0264
  • 11,815 $0.0254
$0.0254 / $0.0327 Buy Now

Part Details for NTA4153NT1G

NTA4153NT1G CAD Models

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NTA4153NT1G Part Data Attributes

Parametric Data
NTA4153NT1G onsemi
Buy Now Datasheet
Compare Parts:
NTA4153NT1G onsemi Single N-Channel with ESD Protection Small Signal MOSFET 20V, 915mA, 230mΩ, SC-75 (SOT-416) 3 LEAD, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SC-75 (SOT-416) 3 LEAD
Package Description SC-75, 3 PIN
Pin Count 3
Manufacturer Package Code 463-01
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.915 A
Drain-source On Resistance-Max 0.23 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTA4153NT1G

This table gives cross-reference parts and alternative options found for NTA4153NT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTA4153NT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDV305N onsemi $0.1657 N-Channel PowerTrench® MOSFET 20V, 0.9A, 220mΩ, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL NTA4153NT1G vs FDV305N
FDY302NZ Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-89, 3 PIN NTA4153NT1G vs FDY302NZ
CMUDM7005 Central Semiconductor Corp Check for Price Small Signal Field-Effect Transistor, 0.915A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-3 NTA4153NT1G vs CMUDM7005
CMUDM7005PBFREE Central Semiconductor Corp Check for Price Small Signal Field-Effect Transistor, NTA4153NT1G vs CMUDM7005PBFREE
CMUDM7005TR Central Semiconductor Corp Check for Price Small Signal Field-Effect Transistor, 0.915A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ULTRAMINI-3 NTA4153NT1G vs CMUDM7005TR
NTE4153NT1G onsemi $0.1447 Single N-Channel Small Signal MOSFET with ESD Protection 20V, 915mA, 230mΩ, SC-89, 3 LEAD, 3000-REEL NTA4153NT1G vs NTE4153NT1G
CMUDM7005TIN/LEAD Central Semiconductor Corp Check for Price Small Signal Field-Effect Transistor, NTA4153NT1G vs CMUDM7005TIN/LEAD
NTK3134NT5G onsemi $0.1092 Single N−Channel Power MOSFET with ESD Protection 20V 890 mA 350 mΩ, SOT-723 3 LEAD, 8000-REEL NTA4153NT1G vs NTK3134NT5G
NTK3134NT1H onsemi Check for Price 750mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 631AA, 3 PIN NTA4153NT1G vs NTK3134NT1H
NVE4153NT1G onsemi $0.3241 Single N−Channel Small Signal MOSFET with ESD Protection 20V, 915mA, 230mΩ, SC-89-3, 3000-REEL, Automotive Qualified NTA4153NT1G vs NVE4153NT1G

NTA4153NT1G Related Parts

NTA4153NT1G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Monitor the device's voltage, current, and temperature to ensure they are within the specified limits. Use a thermal management system to prevent overheating, and implement overcurrent protection to prevent damage.

  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended for the input capacitor. The capacitor should be placed as close to the device as possible to minimize parasitic inductance.

  • Use a shielded enclosure, keep the device and PCB traces away from the edge of the board, and use a common-mode choke or ferrite bead to filter the input voltage. Additionally, use a snubber network to reduce voltage spikes.

  • A 10uF to 22uF X7R or X5R ceramic capacitor is recommended for the output capacitor. The capacitor should be placed as close to the device as possible to minimize parasitic inductance.

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