Part Details for NTB52N10T4G by onsemi
Overview of NTB52N10T4G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTB52N10T4G
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 52A I(D), 100V, 0.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 51 |
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$2.3040 / $3.4560 | Buy Now |
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Chip1Cloud | MOSFET N-CH 100V 52A D2PAK | 3800 |
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RFQ |
Part Details for NTB52N10T4G
NTB52N10T4G CAD Models
NTB52N10T4G Part Data Attributes
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NTB52N10T4G
onsemi
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Datasheet
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NTB52N10T4G
onsemi
Power MOSFET 100V 52A 30 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Part Package Code | D2PAK 2 LEAD | |
Package Description | LEAD FREE, CASE 418B-04, D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 418B-04 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 800 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 52 A | |
Drain-source On Resistance-Max | 0.03 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 178 W | |
Pulsed Drain Current-Max (IDM) | 156 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NTB52N10T4G
This table gives cross-reference parts and alternative options found for NTB52N10T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB52N10T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NTB52N10G | Power MOSFET 100V 52A 30 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 50-TUBE | onsemi | NTB52N10T4G vs NTB52N10G |
NTB52N10T4 | TRANSISTOR 52 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3, FET General Purpose Power | onsemi | NTB52N10T4G vs NTB52N10T4 |