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Part Details for NTBG022N120M3S by onsemi
Overview of NTBG022N120M3S by onsemi
- Distributor Offerings: (26 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTBG022N120M3S
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
77AK5363
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Newark | Sic Mos D2Pak-7L 22Mohm 1200V/ Reel Rohs Compliant: Yes |Onsemi NTBG022N120M3S Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 160 |
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$10.2600 / $11.4700 | Buy Now |
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DISTI #
47AK6823
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Newark | Sic Mosfet, N-Ch, 1.2Kv, 58A, D2Pak Rohs Compliant: Yes |Onsemi NTBG022N120M3S Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$18.4500 / $24.7700 | Buy Now |
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DISTI #
47AK6045
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Newark | Sic Mosfet, N-Ch, 18V, 58A, To-263Hv, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:58A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:7Pins, Rds(On) Test Voltage:18V, Power Dissipation:234W Rohs Compliant: Yes |Onsemi NTBG022N120M3S Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$10.6700 / $11.9300 | Buy Now |
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DISTI #
5556-NTBG022N120M3SCT-ND
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DigiKey | SIC MOSFET 1200 V 22 MOHM M3S SE Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1426 In Stock |
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$12.6275 / $18.2900 | Buy Now |
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DISTI #
NTBG022N120M3S
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L - Tape and Reel (Alt: NTBG022N120M3S) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 4800 |
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$9.5277 / $10.2175 | Buy Now |
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DISTI #
77AK5363
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L - Product that comes on tape, but is not reeled (Alt: 77AK5363) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 38 Weeks, 3 Days Container: Ammo Pack | 160 Partner Stock |
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$10.2600 | Buy Now |
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DISTI #
863-NTBG022N120M3S
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Mouser Electronics | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L RoHS: Compliant | 931 |
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$11.5800 / $18.2900 | Buy Now |
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DISTI #
E02:0323_18614242
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks Date Code: 2341 | Europe - 1600 |
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$15.3819 | Buy Now |
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DISTI #
V72:2272_26830572
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 100A 8-Pin(7+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2232 Container: Cut Strips | Americas - 30 |
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$11.0570 / $14.2390 | Buy Now |
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Future Electronics | N-Channel 1200 V 30 mOhm 234 W Surface Mount SiC MOSFET - D2PAK-7 RoHS: Non Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 114 |
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$11.3600 / $11.9300 | Buy Now |
Part Details for NTBG022N120M3S
NTBG022N120M3S CAD Models
NTBG022N120M3S Part Data Attributes:
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NTBG022N120M3S
onsemi
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Datasheet
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Compare Parts:
NTBG022N120M3S
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L, 800-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-7 | |
| Manufacturer Package Code | 418BJ | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 267 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 14 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G7 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 234 W | |
| Pulsed Drain Current-Max (IDM) | 159 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |