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Part Details for NTBG040N120M3S by onsemi
Overview of NTBG040N120M3S by onsemi
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTBG040N120M3S
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
57AK6406
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Newark | Mosfet Module Configuration:-, Channel Type:N Channel, Continuous Drain Current Id:51A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:7Pins, Rds(On) Test Voltage:18V, Gate Source Threshold Voltage Max:4.4V, Power Dissipation:329W Rohs Compliant: Yes |Onsemi NTBG040N120M3S Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 160 |
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$9.0100 / $9.7200 | Buy Now |
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DISTI #
80AK5048
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Newark | Sic Mosfet, N-Ch, 1.2Kv, 51A, D2Pak-7L Rohs Compliant: Yes |Onsemi NTBG040N120M3S Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$14.8100 / $22.3700 | Buy Now |
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DISTI #
5556-NTBG040N120M3SCT-ND
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DigiKey | SILICON CARBIDE (SIC) MOSFET - E Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
746 In Stock |
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$9.0590 / $13.1200 | Buy Now |
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DISTI #
NTBG040N120M3S
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Avnet Americas | - Tape and Reel (Alt: NTBG040N120M3S) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$7.6703 / $9.1548 | Buy Now |
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DISTI #
57AK6406
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Avnet Americas | - Bulk (Alt: 57AK6406) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 22 Weeks, 3 Days Container: Bulk | 160 Partner Stock |
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$10.2800 / $14.4200 | Buy Now |
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DISTI #
863-NTBG040N120M3S
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Mouser Electronics | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L RoHS: Compliant | 263 |
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$8.3000 / $13.1200 | Buy Now |
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DISTI #
P40:2555_24343164
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Date Code: 2328 | Europe - 800 |
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$7.1110 / $11.6169 | Buy Now |
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DISTI #
E02:0323_22502525
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks Date Code: 2328 | Europe - 800 |
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$7.9313 | Buy Now |
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DISTI #
V99:2348_27010384
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 57A 8-Pin(7+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2328 | Americas - 30 |
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$8.3030 / $11.1960 | Buy Now |
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Future Electronics | 1200V,40MOHM, D2PAK7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel | 130Cut Tape/Mini-Reel |
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$6.8800 | Buy Now |
Part Details for NTBG040N120M3S
NTBG040N120M3S CAD Models
NTBG040N120M3S Part Data Attributes:
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NTBG040N120M3S
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBG040N120M3S
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 418BJ | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 143 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 57 A | |
| Drain-source On Resistance-Max | 0.054 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G7 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 263 W | |
| Pulsed Drain Current-Max (IDM) | 149 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |