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Part Details for NTD20P06LT4G by onsemi
Results Overview of NTD20P06LT4G by onsemi
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTD20P06LT4G Information
NTD20P06LT4G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTD20P06LT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47AC9536
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Newark | Mosfet, P-Ch, 60 V, 15.5 A, To-252-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:15.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Onsemi NTD20P06LT4G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 24 |
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$0.5930 | Buy Now |
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DISTI #
45J2109
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Newark | P Channel Mosfet, -60V, 15.5A D-Pak, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:15.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:5V, Power Dissipation:65W Rohs Compliant: Yes |Onsemi NTD20P06LT4G RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4440 / $0.5830 | Buy Now |
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DISTI #
NTD20P06LT4G
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Avnet Americas | Power MOSFET, P Channel, 60 V, 15.5 A, 150 MilliOhms, TO-252 (DPAK), 3 Pins, Surface Mount - Tape and Reel (Alt: NTD20P06LT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel | 15000 |
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$0.3804 / $0.3943 | Buy Now |
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DISTI #
47AC9536
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Avnet Americas | Power MOSFET, P Channel, 60 V, 15.5 A, 150 MilliOhms, TO-252 (DPAK), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 47AC9536) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 111 Weeks, 0 Days Container: Ammo Pack | 24 Partner Stock |
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$0.8080 / $1.3700 | Buy Now |
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Bristol Electronics | 1019 |
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RFQ | ||
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DISTI #
NTD20P06LT4G
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TME | Transistor: P-MOSFET, unipolar, -60V, -15.5A, 65W, DPAK Min Qty: 1 | 0 |
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$0.4310 / $0.8820 | RFQ |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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DISTI #
NTD20P06LT4G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 | 0 |
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$0.4000 | Buy Now |
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Velocity Electronics | Our Stock | 1 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 47500 |
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RFQ |
Part Details for NTD20P06LT4G
NTD20P06LT4G CAD Models
NTD20P06LT4G Part Data Attributes
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NTD20P06LT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTD20P06LT4G
onsemi
Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK (SINGLE GAUGE) TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 304 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 15.5 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 54 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTD20P06LT4G
This table gives cross-reference parts and alternative options found for NTD20P06LT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD20P06LT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTD20P06LT4 | onsemi | Check for Price | Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | NTD20P06LT4G vs NTD20P06LT4 |
| NTD20P06LG | Rochester Electronics LLC | Check for Price | 15.5A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3 | NTD20P06LT4G vs NTD20P06LG |
| NTD20P06LG | onsemi | Check for Price | Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | NTD20P06LT4G vs NTD20P06LG |
| NTD20P06L | onsemi | Check for Price | 15.5A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | NTD20P06LT4G vs NTD20P06L |
| NTD20P06L-1 | onsemi | Check for Price | 15.5A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 | NTD20P06LT4G vs NTD20P06L-1 |
| NTD20P06L-1G | Rochester Electronics LLC | Check for Price | 15.5A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3 | NTD20P06LT4G vs NTD20P06L-1G |
| NTD20P06L-1G | onsemi | Check for Price | Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ, DPAK INSERTION MOUNT, 75-TUBE | NTD20P06LT4G vs NTD20P06L-1G |
| HAF1002-90S | Renesas Electronics Corporation | Check for Price | 15A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 | NTD20P06LT4G vs HAF1002-90S |
| HAF1002-90STR | Renesas Electronics Corporation | Check for Price | 15A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3 | NTD20P06LT4G vs HAF1002-90STR |
| HAF1002-90STL-E | Renesas Electronics Corporation | Check for Price | 15A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, SC-83, LDPAK-3/2 | NTD20P06LT4G vs HAF1002-90STL-E |
NTD20P06LT4G Frequently Asked Questions (FAQ)
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The maximum junction temperature for the NTD20P06LT4G is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for optimal performance and reliability.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 20V. Additionally, the device should be operated within the recommended operating area to prevent overheating and ensure reliable operation.
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For optimal thermal performance, it's recommended to use a PCB with a thermal pad and a heat sink. The device should be mounted on a copper plane with a minimum size of 1 inch x 1 inch. Additionally, a thermal interface material (TIM) should be used to improve heat transfer between the device and the heat sink.
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To protect the NTD20P06LT4G from ESD, it's recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded. Additionally, an ESD protection diode can be used to protect the device from ESD events.
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The recommended gate resistor value for the NTD20P06LT4G is between 10 ohms and 100 ohms. However, the optimal value may vary depending on the specific application and operating conditions. It's recommended to consult the application note or contact onsemi support for more information.