Datasheets
NTD250N65S3H by:

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 13 A, 250 mΩ, DPAK, 2500-REEL

Part Details for NTD250N65S3H by onsemi

Overview of NTD250N65S3H by onsemi

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Applications Automotive

Price & Stock for NTD250N65S3H

Part # Distributor Description Stock Price Buy
DISTI # 50AJ5885
Newark Mosfet, N-Ch, 650V, 13A, To-252 Rohs Compliant: Yes |Onsemi NTD250N65S3H Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2288
  • 1 $2.8300
  • 10 $2.3800
  • 25 $2.2300
  • 50 $2.0800
  • 100 $1.9200
  • 250 $1.8200
  • 500 $1.7200
  • 1,000 $1.4700
$1.4700 / $2.8300 Buy Now
DISTI # 488-NTD250N65S3HCT-ND
DigiKey POWER MOSFET, N-CHANNEL, SUPERFE Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2500
In Stock
  • 1 $2.7200
  • 10 $2.2880
  • 100 $1.8509
  • 500 $1.6452
  • 1,000 $1.4087
  • 2,500 $1.2726
$1.2726 / $2.7200 Buy Now
DISTI # NTD250N65S3H
Avnet Americas Transistor Mosfet N Channel 650V 13A 3-Pin D-PAK T/R - Tape and Reel (Alt: NTD250N65S3H) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.5068
  • 5,000 $1.4661
  • 10,000 $1.4253
  • 15,000 $1.3846
  • 20,000 $1.3439
  • 25,000 $1.3032
  • 250,000 $1.2624
$1.2624 / $1.5068 Buy Now
DISTI # 863-NTD250N65S3H
Mouser Electronics MOSFET Power MOSFET, N-Channel, SUPERFET III, FAST, 650 V, 13 A, 250 mohm, DPAK RoHS: Compliant 2254
  • 1 $2.8900
  • 10 $2.4300
  • 25 $2.1500
  • 100 $1.9600
  • 250 $1.8600
  • 500 $1.7600
  • 1,000 $1.6900
  • 2,500 $1.4300
$1.4300 / $2.8900 Buy Now
Future Electronics NTD250N65S3H Series N-Channel 650 V 250 mOhm Power MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $1.2500
$1.2500 Buy Now
DISTI # NTD250N65S3H
Avnet Americas Transistor Mosfet N Channel 650V 13A 3-Pin D-PAK T/R - Tape and Reel (Alt: NTD250N65S3H) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.5068
  • 5,000 $1.4661
  • 10,000 $1.4253
  • 15,000 $1.3846
  • 20,000 $1.3439
  • 25,000 $1.3032
  • 250,000 $1.2624
$1.2624 / $1.5068 Buy Now
Ameya Holding Limited   Min Qty: 2500 700
  • 2,500 $2.0529
  • 7,500 $2.0117
  • 12,500 $1.9615
$1.9615 / $2.0529 Buy Now
DISTI # NTD250N65S3H
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $1.2700
$1.2700 Buy Now
DISTI # NTD250N65S3H
Avnet Asia Transistor Mosfet N Channel 650V 13A 3-Pin D-PAK T/R (Alt: NTD250N65S3H) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days 0
RFQ
DISTI # 3766201RL
element14 Asia-Pacific MOSFET, N-CH, 650V, 13A, TO-252 RoHS: Compliant Min Qty: 100 Container: Reel 2288
  • 100 $1.6543
  • 500 $1.3663
$1.3663 / $1.6543 Buy Now
DISTI # 3766201
element14 Asia-Pacific MOSFET, N-CH, 650V, 13A, TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape 2288
  • 1 $2.5848
  • 10 $2.0383
  • 100 $1.6543
  • 500 $1.3663
$1.3663 / $2.5848 Buy Now
DISTI # 3766201
Farnell MOSFET, N-CH, 650V, 13A, TO-252 RoHS: Compliant Min Qty: 1 Lead time: 22 Weeks, 1 Days Container: Cut Tape 2288
  • 1 $2.5314
  • 10 $1.7795
  • 100 $1.4787
  • 500 $1.2657
$1.2657 / $2.5314 Buy Now
DISTI # 3766201RL
Farnell MOSFET, N-CH, 650V, 13A, TO-252 RoHS: Compliant Min Qty: 100 Lead time: 22 Weeks, 1 Days Container: Reel 2288
  • 100 $1.4787
  • 500 $1.2657
$1.2657 / $1.4787 Buy Now
Wuhan P&S - Min Qty: 1 692
  • 1 $3.5500
  • 100 $2.2700
  • 500 $1.8700
  • 1,000 $1.7200
$1.7200 / $3.5500 Buy Now

Part Details for NTD250N65S3H

NTD250N65S3H CAD Models

NTD250N65S3H Part Data Attributes:

NTD250N65S3H onsemi
Buy Now Datasheet
Compare Parts:
NTD250N65S3H onsemi Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 13 A, 250 mΩ, DPAK, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description DPAK-3/2
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 108 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 106 W
Pulsed Drain Current-Max (IDM) 36 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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