Datasheets
NTD3055L104G by: onsemi

Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE

Part Details for NTD3055L104G by onsemi

Overview of NTD3055L104G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for NTD3055L104G

Part # Distributor Description Stock Price Buy
ComSIT USA MOSFET-POWER, N-CHANNEL, LOGIC LEVEL, DPAK Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 182
RFQ
DISTI # 1611345
element14 Asia-Pacific MOSFET, N RoHS: Compliant Min Qty: 5 Container: Each 0
  • 5 $0.3909
  • 10 $0.3453
  • 100 $0.2917
  • 500 $0.2373
  • 1,000 $0.2182
  • 5,000 $0.2109
$0.2109 / $0.3909 Buy Now
DISTI # 1611345
Farnell MOSFET, N RoHS: Compliant Min Qty: 10 Lead time: 23 Weeks, 6 Days Container: Each 0
  • 10 $0.6525
  • 25 $0.3513
  • 100 $0.3024
$0.3024 / $0.6525 Buy Now

Part Details for NTD3055L104G

NTD3055L104G CAD Models

NTD3055L104G Part Data Attributes

NTD3055L104G onsemi
Buy Now Datasheet
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NTD3055L104G onsemi Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code DPAK (SINGLE GAUGE) TO-252
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 61 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.104 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTD3055L104G

This table gives cross-reference parts and alternative options found for NTD3055L104G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD3055L104G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTD3055L104T4 12A, 60V, 0.104ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 onsemi NTD3055L104G vs NTD3055L104T4
NTD3055L104T4G Single N-Channel Logic Level Power MOSFET 60V, 12A, 104mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi NTD3055L104G vs NTD3055L104T4G
Part Number Description Manufacturer Compare
HUF75309D3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation NTD3055L104G vs HUF75309D3
BUZ10 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited NTD3055L104G vs BUZ10
HUFA76409D3 Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation NTD3055L104G vs HUFA76409D3
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix NTD3055L104G vs BUZ71
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi NTD3055L104G vs MTD1N50E1
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation NTD3055L104G vs FQD24N08
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation NTD3055L104G vs HUF75309P3_NL
IRFR1205TRLPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG NTD3055L104G vs IRFR1205TRLPBF
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation NTD3055L104G vs IRFZ30
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation NTD3055L104G vs RFD14N06L

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