Part Details for NTD32N06-1G by onsemi
Overview of NTD32N06-1G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for NTD32N06-1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AK0780
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Newark | Ntd32N06-1G, Single Mosfets |Onsemi NTD32N06-1G RoHS: Not Compliant Min Qty: 1340 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.2450 / $0.3120 | Buy Now |
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DISTI #
NTD32N06-1G
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Avnet Americas | NFET DPAK 60V .026R SL - Rail/Tube (Alt: NTD32N06-1G) RoHS: Compliant Min Qty: 1336 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 3175 Partner Stock |
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$0.2321 / $0.2771 | Buy Now |
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Rochester Electronics | 32A, 60V, 0.026ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 3175 |
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$0.2321 / $0.2730 | Buy Now |
Part Details for NTD32N06-1G
NTD32N06-1G CAD Models
NTD32N06-1G Part Data Attributes
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NTD32N06-1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTD32N06-1G
onsemi
32A, 60V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 369D-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 313 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 32 A | |
| Drain-source On Resistance-Max | 0.026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 93.75 W | |
| Pulsed Drain Current-Max (IDM) | 90 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |