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Transistors / Power Field-Effect Transistors / NTD5867NLT4G
Datasheets
NTD5867NLT4G by:

Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL

Part Details for NTD5867NLT4G by onsemi

Results Overview of NTD5867NLT4G by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Renewable Energy Automotive

NTD5867NLT4G Information

NTD5867NLT4G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTD5867NLT4G

Part # Distributor Description Stock Price Buy
DISTI # 1879964RL
Farnell MOSFET,N CH,W DIODE,60V,20A,DPAK RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel 73761
  • 100 $0.4682
  • 500 $0.4443
  • 1,000 $0.4190
  • 5,000 $0.4102
$0.4102 / $0.4682 Buy Now
DISTI # 1879964
Farnell MOSFET,N CH,W DIODE,60V,20A,DPAK RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape 73761
  • 1 $0.5011
  • 10 $0.4935
  • 100 $0.4682
  • 500 $0.4443
  • 1,000 $0.4190
  • 5,000 $0.4102
$0.4102 / $0.5011 Buy Now
DISTI # 2442201
Farnell NFET DPAK 60V 18A 43MOHM RoHS: Compliant Min Qty: 2500 Lead time: 51 Weeks, 1 Days Container: Reel 22500
  • 2,500 $0.1350
$0.1350 Buy Now
DISTI # 4280919
Farnell   RoHS: Compliant Min Qty: 2500 Container: Each 0
  • 2,500 $0.5187
$0.5187 Buy Now
DISTI # NTD5867NLT4G
Avnet Americas Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: NTD5867NLT4G) RoHS: Compliant Min Qty: 1316 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 289000 Partner Stock
  • 1,316 $0.4634
  • 1,400 $0.4578
  • 2,700 $0.4524
  • 6,600 $0.4502
  • 14,000 $0.4471
$0.4471 / $0.4634 Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 98
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 23
  • 1 $1.1500
  • 100 $0.8700
  • 1,000 $0.7500
$0.7500 / $1.1500 Buy Now
Flip Electronics Stock, ship today 327000
RFQ
LCSC 60V 20A 39m10V20A 36W 2.5V250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS 47
  • 1 $0.9015
  • 10 $0.7471
  • 30 $0.6714
  • 100 $0.5942
  • 500 $0.5501
  • 1,000 $0.5264
$0.5264 / $0.9015 Buy Now
Win Source Electronics MOSFET N-CH 60V 20A DPAK 40553
  • 45 $1.1700
  • 105 $0.9600
  • 165 $0.9300
  • 225 $0.9000
  • 290 $0.8700
  • 385 $0.7800
$0.7800 / $1.1700 Buy Now

Part Details for NTD5867NLT4G

NTD5867NLT4G Part Data Attributes

Parametric Data
NTD5867NLT4G onsemi
Buy Now Datasheet
Compare Parts:
NTD5867NLT4G onsemi Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code DPAK 4 LEAD Single Gauge Surface Mount
Package Description DPAK-3
Pin Count 4
Manufacturer Package Code 369AA
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 18 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 36 W
Power Dissipation-Max (Abs) 36 W
Pulsed Drain Current-Max (IDM) 76 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON
Turn-off Time-Max (toff) 20.6 ns
Turn-on Time-Max (ton) 19.1 ns

Alternate Parts for NTD5867NLT4G

This table gives cross-reference parts and alternative options found for NTD5867NLT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTD5867NLT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FHK20N06 Fenghua (HK) Electronics Ltd Check for Price Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 NTD5867NLT4G vs FHK20N06
NTD20N06L-1G onsemi Check for Price Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK INSERTION MOUNT, 75-TUBE NTD5867NLT4G vs NTD20N06L-1G
NTD20N06G onsemi Check for Price Single N-Channel Power MOSFET 60V, 20A, 46mΩ, DPAK (SINGLE GAUGE) TO-252, 75-TUBE NTD5867NLT4G vs NTD20N06G
IRFR4105TR International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 NTD5867NLT4G vs IRFR4105TR
NTD5867NL-1G onsemi Check for Price Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK INSERTION MOUNT, 75-TUBE NTD5867NLT4G vs NTD5867NL-1G
AUIRFR4105TRL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 NTD5867NLT4G vs AUIRFR4105TRL
NTD20N06L onsemi Check for Price 20A, 60V, 0.048ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 NTD5867NLT4G vs NTD20N06L
AUIRFR4105 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 NTD5867NLT4G vs AUIRFR4105
NTD20N06LT4G onsemi Check for Price Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL NTD5867NLT4G vs NTD20N06LT4G
NTDV20N06T4G-VF01 onsemi $0.7127 Single N-Channel Power MOSFET 60V 20A 46mΩ, DPAK-3, 2500-REEL, Automotive Qualified NTD5867NLT4G vs NTDV20N06T4G-VF01

NTD5867NLT4G Related Parts

NTD5867NLT4G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.

  • The SOA is typically defined by the device's voltage, current, and power ratings. For the NTD5867NLT4G, the SOA is limited by the maximum voltage rating of 40V, maximum current rating of 30A, and maximum power rating of 120W.

  • Use ESD-sensitive handling procedures, such as grounding wrist straps and using ESD-protective packaging. Also, ensure that the device is properly connected to a ground plane during PCB assembly.

  • Store the device in its original packaging, away from direct sunlight and moisture. Handle the device by the body, not the leads, and avoid bending or flexing the leads.

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