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Part Details for NTD5C648NLT4G by onsemi
Overview of NTD5C648NLT4G by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTD5C648NLT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
62AC7352
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Newark | Mosfet, Aec-Q101, N-Ch, 60V, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:91A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0034Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.1V, Power Rohs Compliant: Yes |Onsemi NTD5C648NLT4G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$2.7200 / $5.1500 | Buy Now |
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DISTI #
NTD5C648NLT4GOSCT-ND
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DigiKey | MOSFET N-CH 60V 22A/91A DPAK Min Qty: 1 Lead time: 41 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1160 In Stock |
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$2.4433 / $4.7300 | Buy Now |
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DISTI #
A03:0893_08262118
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Arrow Electronics | NTD5C648NLT4G ON Semiconductor Transistors MOSFETs N-CH 60V 22A Automotive 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 2500 Package Multiple: 2500 Date Code: 2331 | Asia - 70000 |
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$2.3130 / $2.4340 | Buy Now |
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DISTI #
V72:2272_21690271
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Arrow Electronics | NTD5C648NLT4G ON Semiconductor Transistors MOSFETs N-CH 60V 22A Automotive 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 1 Package Multiple: 1 Lead time: 39 Weeks Date Code: 2317 Container: Cut Strips | Americas - 2500 |
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$2.2640 / $2.8560 | Buy Now |
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DISTI #
68413041
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Verical | NTD5C648NLT4G ON Semiconductor Transistors MOSFETs N-CH 60V 22A Automotive 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 3 Package Multiple: 1 Date Code: 2317 | Americas - 2500 |
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$2.2640 / $2.8560 | Buy Now |
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DISTI #
NTD5C648NLT4G
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TME | Transistor: N-MOSFET, unipolar, 60V, 16A, Idm: 550A, 2.2W, DPAK Min Qty: 1 | 0 |
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$3.0100 / $4.5100 | RFQ |
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Ameya Holding Limited | 866 |
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RFQ | ||
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DISTI #
2895670RL
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element14 Asia-Pacific | MOSFET, AEC-Q101, N-CH, 60V, TO-252 RoHS: Compliant Min Qty: 100 Container: Reel | 2401 |
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$2.6817 / $2.7408 | Buy Now |
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DISTI #
2895670
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element14 Asia-Pacific | MOSFET, AEC-Q101, N-CH, 60V, TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 2401 |
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$2.6817 / $3.7603 | Buy Now |
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DISTI #
2895670RL
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Farnell | MOSFET, AEC-Q101, N-CH, 60V, TO-252 RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel | 2401 |
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$2.5911 | Buy Now |
Part Details for NTD5C648NLT4G
NTD5C648NLT4G CAD Models
NTD5C648NLT4G Part Data Attributes:
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NTD5C648NLT4G
onsemi
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Datasheet
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Compare Parts:
NTD5C648NLT4G
onsemi
Single N-Channel Power MOSFET 60V, 91A, 4.1mΩ, 2500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 62 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 223 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 91 A | |
| Drain-source On Resistance-Max | 0.0057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 28 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 76 W | |
| Pulsed Drain Current-Max (IDM) | 550 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |