Datasheets
NTE2389 by: NTE Electronics Inc

Power Field-Effect Transistor, 35A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for NTE2389 by NTE Electronics Inc

Overview of NTE2389 by NTE Electronics Inc

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for NTE2389

Part # Distributor Description Stock Price Buy
DISTI # 2368-NTE2389-ND
DigiKey MOSFET N-CHANNEL 60V 35A TO220 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT 152
In Stock
  • 1 $7.6700
  • 10 $7.2900
  • 20 $6.9000
  • 50 $6.5200
  • 100 $6.3700
$6.3700 / $7.6700 Buy Now
DISTI # 70215906
RS Power Mosfet N-Channel 60V Id38A To-220 Case High Speed Switch Enhancement Mode | NTE Electronics Inc. NTE2389 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk 2
  • 1 $6.7000
$6.7000 Buy Now
Onlinecomponents.com Power Mosfet N-channel 60V Id=38A TO-220 Case High Speed Switch Enhancement Mode Rds=0.045 Ohm RoHS: Compliant 6 In Stock
  • 5 $6.4200
  • 50 $5.0500
  • 100 $4.9000
  • 250 $4.7500
  • 500 $4.4700
  • 1,000 $4.3500
  • 2,500 $4.2900
  • 5,000 $4.1200
$4.1200 / $6.4200 Buy Now
Bristol Electronics   Min Qty: 1 2
  • 1 $8.9600
$8.9600 Buy Now
Bristol Electronics   1
RFQ
Quest Components 35 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET 33
  • 1 $14.3325
  • 4 $7.1663
  • 29 $6.2108
$6.2108 / $14.3325 Buy Now
Quest Components 35 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET 1
  • 1 $8.2950
$8.2950 Buy Now
Quest Components 35 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET 1
  • 1 $12.0000
  • 2 $8.0000
$8.0000 / $12.0000 Buy Now
DISTI # NTE2389
TME Transistor: N-MOSFET, unipolar, 60V, 35A, Idm: 152A, 125W, TO220 Min Qty: 1 9
  • 1 $7.6900
  • 3 $6.9200
  • 10 $6.1100
  • 25 $5.4900
$5.4900 / $7.6900 Buy Now
Master Electronics Power Mosfet N-channel 60V Id=38A TO-220 Case High Speed Switch Enhancement Mode Rds=0.045 Ohm RoHS: Compliant 6 In Stock
  • 5 $6.4200
  • 50 $5.0500
  • 100 $4.9000
  • 250 $4.7500
  • 500 $4.4700
  • 1,000 $4.3500
  • 2,500 $4.2900
  • 5,000 $4.1200
$4.1200 / $6.4200 Buy Now

Part Details for NTE2389

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NTE2389 Part Data Attributes

NTE2389 NTE Electronics Inc
Buy Now Datasheet
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NTE2389 NTE Electronics Inc Power Field-Effect Transistor, 35A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer NTE ELECTRONICS
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 152 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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