Datasheets
NTE2527 by: NTE Electronics Inc

Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

Part Details for NTE2527 by NTE Electronics Inc

Overview of NTE2527 by NTE Electronics Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NTE2527

Part # Distributor Description Stock Price Buy
DISTI # 31C3650
Newark Transistor, bjt, pnp,100V V(Br)Ceo,4A I(C),to-251Var |Nte Electronics NTE2527 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # NTE2527
TME Transistor: PNP, bipolar, 120V, 4A, 20W, TO251 Min Qty: 1 42
  • 1 $2.0400
  • 3 $1.8300
  • 10 $1.6200
  • 25 $1.4600
$1.4600 / $2.0400 Buy Now

Part Details for NTE2527

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NTE2527 Part Data Attributes:

NTE2527 NTE Electronics Inc
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NTE2527 NTE Electronics Inc Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description IN-LINE, R-PSIP-T3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 100 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 130 MHz

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