Part Details for NTE367 by NTE Electronics Inc
Overview of NTE367 by NTE Electronics Inc
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Space Technology
Internet of Things (IoT)
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Medical Imaging
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
Price & Stock for NTE367
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31C3979
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Newark | Transistor,bjt,npn,16V V(Br)Ceo,8A I(C),sot-119 |Nte Electronics NTE367 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
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Onlinecomponents.com | Transistor NPN Silicon 36V IC=8A Po=45W 407-512 Mhz RF Power Output |
1 In Stock |
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$59.2400 / $87.6000 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 4 |
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$54.0000 | Buy Now |
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Quest Components | RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN | 5 |
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$57.6128 | Buy Now |
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Quest Components | RF POWER BIPOLAR TRANSISTOR, 1-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, NPN | 3 |
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$58.5000 | Buy Now |
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DISTI #
NTE367
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TME | Transistor: NPN, bipolar, RF, 16V, 9A, 117W, W65, Pout: 45W Min Qty: 1 | 0 |
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$65.8000 / $92.1000 | RFQ |
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Master Electronics | Transistor NPN Silicon 36V IC=8A Po=45W 407-512 Mhz RF Power Output |
1 In Stock |
|
$59.2400 / $87.6000 | Buy Now |
Part Details for NTE367
NTE367 CAD Models
NTE367 Part Data Attributes
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NTE367
NTE Electronics Inc
Buy Now
Datasheet
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NTE367
NTE Electronics Inc
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, W65, 4 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Package Description | FLANGE MOUNT, O-CRFM-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Collector Current-Max (IC) | 9 A | |
| Collector-Base Capacitance-Max | 125 pF | |
| Collector-Emitter Voltage-Max | 16 V | |
| Configuration | SINGLE | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | O-CRFM-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 175 W | |
| Power Dissipation-Max (Abs) | 175 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for NTE367
This table gives cross-reference parts and alternative options found for NTE367. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE367, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MS1490 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, 6 PIN | Advanced Power Technology | NTE367 vs MS1490 |
| MRF648 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, | Advanced Semiconductor Inc | NTE367 vs MRF648 |
| MRF658 | UHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | NTE367 vs MRF658 |
| ULBM25 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | Advanced Semiconductor Inc | NTE367 vs ULBM25 |
| MRF646 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | Motorola Semiconductor Products | NTE367 vs MRF646 |
| BLU45/12 | TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, FM-6, BIP RF Power | NXP Semiconductors | NTE367 vs BLU45/12 |
| MRF646 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, | Advanced Semiconductor Inc | NTE367 vs MRF646 |
| BLU30/12 | TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, FM-6, BIP RF Power | NXP Semiconductors | NTE367 vs BLU30/12 |
| MS1480 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M111, 6 PIN | Microsemi Corporation | NTE367 vs MS1480 |
| JO3037 | UHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | NTE367 vs JO3037 |