Part Details for NTE55MCP by NTE Electronics Inc
Results Overview of NTE55MCP by NTE Electronics Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NTE55MCP Information
NTE55MCP by NTE Electronics Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for NTE55MCP
NTE55MCP CAD Models
NTE55MCP Part Data Attributes
|
NTE55MCP
NTE Electronics Inc
Buy Now
Datasheet
|
Compare Parts:
NTE55MCP
NTE Electronics Inc
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Part Package Code | SFM | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | MATCHED COMPLIMENTARY PAIR CONTAINS NTE54 AND NTE55 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 150 V | |
Configuration | SEPARATE, 2 ELEMENTS | |
DC Current Gain-Min (hFE) | 100 | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 2 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN AND PNP | |
Power Dissipation Ambient-Max | 50 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 30 MHz |