Datasheets
NTE66 by: NTE Electronics Inc

Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for NTE66 by NTE Electronics Inc

Overview of NTE66 by NTE Electronics Inc

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Price & Stock for NTE66

Part # Distributor Description Stock Price Buy
DISTI # 29C4771
Newark N Channel Mosfet, 100V, 14A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:14A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Nte Electronics NTE66 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1
  • 1 $1.6100
  • 10 $1.6100
  • 25 $1.6100
  • 50 $1.6100
  • 100 $1.6100
  • 250 $1.6100
  • 500 $1.6100
$1.6100 Buy Now
DISTI # 2368-NTE66-ND
DigiKey MOSFET N-CHANNEL 100V 14A TO220 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT 165
In Stock
  • 1 $6.4400
  • 10 $6.1200
  • 20 $5.8000
  • 50 $5.4700
  • 100 $5.3500
$5.3500 / $6.4400 Buy Now
DISTI # 70215939
RS MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.1Ohm, ID 14A, TO-220,PD 77W, VGS +/-20V,-55C | NTE Electronics Inc. NTE66 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk 8
  • 1 $7.0800
  • 50 $6.7300
  • 100 $6.4400
  • 250 $6.1000
$6.1000 / $7.0800 Buy Now
Onlinecomponents.com Mosfet Power N-channel 100V Id=12A Rds=0.15 Ohm TO-220 High Speed Switch RoHS: Compliant 10 In Stock
  • 5 $6.7300
  • 50 $5.3000
  • 100 $5.1400
  • 250 $4.9800
  • 500 $4.6900
  • 1,000 $4.5700
  • 2,500 $4.5000
  • 5,000 $4.3200
$4.3200 / $6.7300 Buy Now
Bristol Electronics   Min Qty: 1 27
  • 1 $8.9600
  • 4 $5.8240
  • 10 $4.4800
$4.4800 / $8.9600 Buy Now
Bristol Electronics   1
RFQ
Bristol Electronics   2
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 12
  • 1 $3.6225
  • 4 $2.4150
  • 11 $1.8113
$1.8113 / $3.6225 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 2
  • 1 $12.0000
  • 2 $8.0000
$8.0000 / $12.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 1
  • 1 $13.9275
$13.9275 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 9
  • 1 $15.2775
  • 3 $14.2590
  • 6 $13.5800
$13.5800 / $15.2775 Buy Now
DISTI # NTE66
TME Transistor: N-MOSFET, unipolar, 100V, 10A, Idm: 56A, 77W, TO220 Min Qty: 1 13
  • 1 $6.8900
  • 3 $6.2000
  • 10 $5.4800
  • 25 $4.9200
$4.9200 / $6.8900 Buy Now
Master Electronics Mosfet Power N-channel 100V Id=12A Rds=0.15 Ohm TO-220 High Speed Switch RoHS: Compliant 10 In Stock
  • 5 $6.7300
  • 50 $5.3000
  • 100 $5.1400
  • 250 $4.9800
  • 500 $4.6900
  • 1,000 $4.5700
  • 2,500 $4.5000
  • 5,000 $4.3200
$4.3200 / $6.7300 Buy Now

Part Details for NTE66

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NTE66 Part Data Attributes

NTE66 NTE Electronics Inc
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NTE66 NTE Electronics Inc Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer NTE ELECTRONICS
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 69 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 200 ns

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