Datasheets
NTGS3455T1G by:

Single P-Channel Power MOSFET -30V -3.5A 100mΩ, TSOP-6, 3000-REEL

Part Details for NTGS3455T1G by onsemi

Results Overview of NTGS3455T1G by onsemi

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NTGS3455T1G Information

NTGS3455T1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTGS3455T1G

Part # Distributor Description Stock Price Buy
DISTI # 81Y7041
Newark Mosfet, P-Ch, -30V, -2.5A, Tsop, Transistor Polarity:P Channel, Continuous Drain Current Id:-2.5A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.094Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.87V, Power Rohs Compliant: Yes |Onsemi NTGS3455T1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 20310
  • 1 $0.4470
  • 10 $0.3350
  • 25 $0.3110
  • 50 $0.2860
  • 100 $0.2620
  • 250 $0.2450
  • 500 $0.2280
  • 1,000 $0.2090
$0.2090 / $0.4470 Buy Now
DISTI # 86AK5816
Newark Pfet Tsop6 30V .100R Tr, Transistor Polarity:P Channel, Continuous Drain Current Id:3.5A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.1Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.87V, Power Dissipation Rohs Compliant: Yes |Onsemi NTGS3455T1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 6000
  • 3,000 $0.1740
  • 6,000 $0.1730
$0.1730 / $0.1740 Buy Now
DISTI # NTGS3455T1G
Avnet Americas Trans MOSFET P-CH 30V 3.5A 6-Pin TSOP T/R - Tape and Reel (Alt: NTGS3455T1G) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.1627
  • 12,000 $0.1607
  • 18,000 $0.1588
  • 30,000 $0.1581
  • 60,000 $0.1569
$0.1569 / $0.1627 Buy Now
DISTI # NTGS3455T1G
TME Transistor: P-MOSFET, unipolar, -30V, -3.5A, 2W, TSOP6 Min Qty: 1 0
  • 1 $0.3810
  • 10 $0.2920
  • 50 $0.2630
  • 100 $0.2260
  • 500 $0.1950
  • 1,000 $0.1800
  • 1,500 $0.1720
  • 3,000 $0.1660
$0.1660 / $0.3810 RFQ
ComSIT USA P-CHANNEL MOSFET Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET , ECCN: EAR99 RoHS: Compliant Stock DE - 2659
Stock ES - 1511
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # NTGS3455T1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 0
  • 6,000 $0.1700
$0.1700 Buy Now
DISTI # NTGS3455T1G
Avnet Asia Trans MOSFET P-CH 30V 3.5A 6-Pin TSOP T/R (Alt: NTGS3455T1G) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days 0
  • 6,000 $0.1755
  • 12,000 $0.1732
  • 18,000 $0.1710
  • 30,000 $0.1689
  • 60,000 $0.1647
  • 150,000 $0.1607
  • 300,000 $0.1569
$0.1569 / $0.1755 Buy Now
DISTI # NTGS3455T1G
Avnet Silica Trans MOSFET PCH 30V 35A 6Pin TSOP TR (Alt: NTGS3455T1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NTGS3455T1G
EBV Elektronik Trans MOSFET PCH 30V 35A 6Pin TSOP TR (Alt: NTGS3455T1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 18000
RFQ
New Advantage Corporation P-Channel 30 V 100 mOhm 2 W Surface Mount Power MOSFET - TSOP-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 147000
  • 3,000 $0.2229
  • 147,000 $0.2080
$0.2080 / $0.2229 Buy Now
Win Source Electronics MOSFET P-CH 30V 2.5A 6-TSOP 23000
  • 245 $0.2047
  • 600 $0.1680
  • 925 $0.1628
  • 1,270 $0.1575
  • 1,645 $0.1523
  • 2,200 $0.1365
$0.1365 / $0.2047 Buy Now

Part Details for NTGS3455T1G

NTGS3455T1G CAD Models

NTGS3455T1G Part Data Attributes

NTGS3455T1G onsemi
Buy Now Datasheet
Compare Parts:
NTGS3455T1G onsemi Single P-Channel Power MOSFET -30V -3.5A 100mΩ, TSOP-6, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TSOP-6
Package Description TSOP-6
Pin Count 6
Manufacturer Package Code 318G-02
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTGS3455T1G

This table gives cross-reference parts and alternative options found for NTGS3455T1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTGS3455T1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SI6954ADQ-T1-E3 Vishay Intertechnologies $0.7502 Small Signal Field-Effect Transistor, 3.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, MO-153, TSSOP-8 NTGS3455T1G vs SI6954ADQ-T1-E3
SI6968BEDQ-T1-GE3 Vishay Intertechnologies $0.4976 Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 NTGS3455T1G vs SI6968BEDQ-T1-GE3
ZXMN3A04DN8TA Diodes Incorporated $1.0543 Small Signal Field-Effect Transistor, MS-012AA, SOIC-8 NTGS3455T1G vs ZXMN3A04DN8TA
ZXMN2A04DN8TA Diodes Incorporated $1.1887 Small Signal Field-Effect Transistor, 5.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 NTGS3455T1G vs ZXMN2A04DN8TA

NTGS3455T1G Related Parts

NTGS3455T1G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.

  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.

  • Keep the device away from noise sources, use a solid ground plane, and ensure a low-impedance path to ground. Use shielded cables and connectors, and consider adding EMI filters or chokes if necessary.

  • Use a low-dropout linear regulator or a switching regulator with a high power conversion efficiency. Optimize the system's power management scheme, and consider using power gating or dynamic voltage and frequency scaling.

  • Use a 4-wire Kelvin connection for accurate voltage and current measurements. Employ a high-bandwidth oscilloscope and a current probe for transient analysis. Consider using a thermal imaging camera for thermal characterization.

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