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Part Details for NTH4L160N120SC1 by onsemi
Overview of NTH4L160N120SC1 by onsemi
- Distributor Offerings: (29 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTH4L160N120SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
91AH8493
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Newark | Sic Mosfet, N-Ch, 20V, 17.3A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:17.3A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:4Pins, Rds(On) Test Voltage:20V, Power Dissipation:111W Rohs Compliant: Yes |Onsemi NTH4L160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 90 |
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$4.1600 | Buy Now |
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DISTI #
74AH4844
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Newark | Mosfet, N-Ch, 1.2Kv, 17.3A, To-247 Rohs Compliant: Yes |Onsemi NTH4L160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$6.2100 / $9.0200 | Buy Now |
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DISTI #
5556-NTH4L160N120SC1-ND
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DigiKey | SICFET N-CH 1200V 17.3A TO247 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
1111 In Stock |
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$4.5165 / $8.5000 | Buy Now |
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DISTI #
NTH4L160N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L - Rail/Tube (Alt: NTH4L160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
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$4.3834 / $5.2318 | Buy Now |
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DISTI #
91AH8493
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L - Bulk (Alt: 91AH8493) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Bulk | 90 Partner Stock |
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$5.8900 / $8.2600 | Buy Now |
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DISTI #
863-NTH4L160N120SC1
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Mouser Electronics | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L RoHS: Compliant | 645 |
|
$4.5100 / $6.7200 | Buy Now |
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DISTI #
V99:2348_24261743
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 27.3A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2220 | Americas - 30 |
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$3.4310 / $4.5468 | Buy Now |
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DISTI #
V79:2366_26240398
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 27.3A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Date Code: 2022 | Americas - 30 |
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$3.8340 / $4.8610 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 17.3 A 111 W Silicon Carbide Power Mosfet - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 399Tube |
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$4.4300 / $5.1700 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 17.3 A 111 W Silicon Carbide Power Mosfet - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 70Tube |
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$4.4300 / $5.1700 | Buy Now |
Part Details for NTH4L160N120SC1
NTH4L160N120SC1 CAD Models
NTH4L160N120SC1 Part Data Attributes:
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NTH4L160N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NTH4L160N120SC1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 340CJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 61 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 128 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 17.3 A | |
| Drain-source On Resistance-Max | 0.224 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4.3 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 111 W | |
| Pulsed Drain Current-Max (IDM) | 69 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE | |
| Turn-off Time-Max (toff) | 39 ns | |
| Turn-on Time-Max (ton) | 40 ns |
Alternate Parts for NTH4L160N120SC1
This table gives cross-reference parts and alternative options found for NTH4L160N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTH4L160N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NVH4L160N120SC1 | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L, 450-TUBE, Automotive Qualified | onsemi | NTH4L160N120SC1 vs NVH4L160N120SC1 |