Part Details for NTHD3100CT1G by onsemi
Results Overview of NTHD3100CT1G by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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NTHD3100CT1G Information
NTHD3100CT1G by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for NTHD3100CT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50AC6487
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Newark | Mosfet, N/P-Ch, 20 V, 3.9A, Chipfet, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:3.9A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHD3100CT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 10 |
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$0.4390 / $1.1400 | Buy Now |
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DISTI #
45J2138
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Newark | Dual P Channel Mosfet, -20V, 1206A, Full Reel, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:3.9A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi NTHD3100CT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4040 / $0.4100 | Buy Now |
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DISTI #
NTHD3100CT1G
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Avnet Americas | Trans MOSFET N/P-CH 20V 2.9A/3.2A 8-Pin Chip FET T/R - Tape and Reel (Alt: NTHD3100CT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 12000 |
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$0.3506 / $0.3842 | Buy Now |
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DISTI #
50AC6487
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Avnet Americas | Trans MOSFET N/P-CH 20V 2.9A/3.2A 8-Pin Chip FET T/R - Product that comes on tape, but is not reeled (Alt: 50AC6487) RoHS: Compliant Min Qty: 5 Package Multiple: 5 Lead time: 19 Weeks, 4 Days Container: Ammo Pack | 10 Partner Stock |
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$0.6440 / $1.0200 | Buy Now |
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DISTI #
NTHD3100CT1G
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Avnet Americas | Trans MOSFET N/P-CH 20V 2.9A/3.2A 8-Pin Chip FET T/R - Tape and Reel (Alt: NTHD3100CT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$0.3506 / $0.3842 | Buy Now |
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Bristol Electronics | 11538 |
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RFQ | ||
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DISTI #
NTHD3100CT1G
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TME | Transistor: N/P-MOSFET, unipolar, complementary pair, 20/-20V Min Qty: 1 | 2125 |
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$0.4780 / $1.1290 | Buy Now |
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DISTI #
NTHD3100CT1G
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$0.3700 | Buy Now |
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DISTI #
NTHD3100CT1G
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Avnet Asia | Trans MOSFET N/P-CH 20V 2.9A/3.2A 8-Pin Chip FET T/R (Alt: NTHD3100CT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | 0 |
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$0.4230 / $0.5310 | Buy Now |
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DISTI #
NTHD3100CT1G
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Avnet Silica | Trans MOSFET N/P-CH 20V 2.9A/3.2A 8-Pin Chip FET T/R (Alt: NTHD3100CT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for NTHD3100CT1G
NTHD3100CT1G CAD Models
NTHD3100CT1G Part Data Attributes
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NTHD3100CT1G
onsemi
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Datasheet
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NTHD3100CT1G
onsemi
Complementary ChipFET™ Power MOSFET 20V, ChipFET, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | ChipFET | |
| Package Description | CHIPFET-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 1206A-03 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.9 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.1 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |