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Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 30 A, 110 mΩ, TO-247, 450-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
62AC7355
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Newark | Mosfet, N-Ch, 650V, 30A, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.098Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Dissipationrohs Compliant: Yes |Onsemi NTHL110N65S3F Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 450 |
|
$5.8900 / $8.3900 | Buy Now |
DISTI #
NTHL110N65S3FOS-ND
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DigiKey | MOSFET N-CH 650V 30A TO247-3 Min Qty: 1 Lead time: 14 Weeks Container: Tube |
900 In Stock |
|
$3.8038 / $5.1400 | Buy Now |
DISTI #
NTHL110N65S3F
|
Avnet Americas | Transistor MOSFET N-CH 650V 30A 3-Pin TO-247 T/R - Rail/Tube (Alt: NTHL110N65S3F) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
|
$3.7734 / $4.5038 | Buy Now |
DISTI #
863-NTHL110N65S3F
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Mouser Electronics | MOSFET SUPERFET3 650V RoHS: Compliant | 10770 |
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$3.8800 / $7.3200 | Buy Now |
DISTI #
NTHL110N65S3F
|
Avnet Americas | Transistor MOSFET N-CH 650V 30A 3-Pin TO-247 T/R - Rail/Tube (Alt: NTHL110N65S3F) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 14 Weeks, 0 Days Container: Tube | 0 |
|
$3.7734 / $4.5038 | Buy Now |
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Ameya Holding Limited | Min Qty: 2 | 1 |
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$8.0244 / $8.5291 | Buy Now |
DISTI #
NTHL110N65S3F
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$3.8000 | Buy Now |
DISTI #
NTHL110N65S3F
|
Avnet Asia | Transistor MOSFET N-CH 650V 30A 3-Pin TO-247 T/R (Alt: NTHL110N65S3F) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 14 Weeks, 0 Days | 0 |
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$3.5801 / $4.0041 | Buy Now |
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Chip1Cloud | MOSFET N-CH 650V 30A TO247-3 | 2570 |
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RFQ | |
DISTI #
2895640
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element14 Asia-Pacific | MOSFET, N-CH, 650V, 30A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$5.1741 / $7.7023 | Buy Now |
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NTHL110N65S3F
onsemi
Buy Now
Datasheet
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Compare Parts:
NTHL110N65S3F
onsemi
Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 30 A, 110 mΩ, TO-247, 450-TUBE
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 340CH | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 380 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 240 W | |
Pulsed Drain Current-Max (IDM) | 69 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for NTHL110N65S3F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHL110N65S3F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TK28N65W | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | NTHL110N65S3F vs TK28N65W |
TK28E65W | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | Toshiba America Electronic Components | NTHL110N65S3F vs TK28E65W |
IPW65R110CFDAFKSA1 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | NTHL110N65S3F vs IPW65R110CFDAFKSA1 |
IPW65R110CFDFKSA2 | Power Field-Effect Transistor, | Infineon Technologies AG | NTHL110N65S3F vs IPW65R110CFDFKSA2 |
IPW65R110CFDFKSA1 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | NTHL110N65S3F vs IPW65R110CFDFKSA1 |