Part Details for NTHS2101PT1G by onsemi
Overview of NTHS2101PT1G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTHS2101PT1G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1691 |
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RFQ | ||
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Quest Components | 1352 |
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$0.2660 / $0.6650 | Buy Now | |
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ComSIT USA | POWER MOSFET Power Field-Effect Transistor, 5.4A I(D), 8V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1855 |
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RFQ |
Part Details for NTHS2101PT1G
NTHS2101PT1G CAD Models
NTHS2101PT1G Part Data Attributes
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NTHS2101PT1G
onsemi
Buy Now
Datasheet
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NTHS2101PT1G
onsemi
Power MOSFET 8V 7.5A 25 mOhm Single P-Channel ChipFET, ChipFET, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | ChipFET | |
| Package Description | SMALL OUTLINE, R-XDSO-C8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 1206A-03 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 8 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 7.5 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTHS2101PT1G
This table gives cross-reference parts and alternative options found for NTHS2101PT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTHS2101PT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTHS2101PT1 | 5.4A, 8V, 0.025ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 1206A-03, CHIPFET-8 | Rochester Electronics LLC | NTHS2101PT1G vs NTHS2101PT1 |
| NTHS2101PT1 | Power MOSFET 8V 7.5A 25 mOhm Single P-Channel ChipFET, ChipFET, 3000-REEL | onsemi | NTHS2101PT1G vs NTHS2101PT1 |