Datasheets
NTJS4151PT1G by:

Single P−Channel Trench Power MOSFET -20V -4.2A 60mΩ, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL

Part Details for NTJS4151PT1G by onsemi

Results Overview of NTJS4151PT1G by onsemi

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NTJS4151PT1G Information

NTJS4151PT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTJS4151PT1G

Part # Distributor Description Stock Price Buy
DISTI # 09R9658
Newark P Channel Mosfet, -20V, 4.2A, Sc-88, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:400Mv Rohs Compliant: Yes |Onsemi NTJS4151PT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 19346
  • 1 $0.0750
  • 25 $0.0750
  • 50 $0.0750
  • 100 $0.0750
  • 250 $0.0750
  • 500 $0.0750
  • 1,000 $0.0750
$0.0750 Buy Now
DISTI # 81Y7048
Newark Mosfet, P-Ch, 20 V, 4.2 A, Sot-363-6, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:400Mv Rohs Compliant: Yes |Onsemi NTJS4151PT1G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 250
  • 1 $0.4470
  • 25 $0.3100
  • 50 $0.2470
  • 100 $0.1840
  • 250 $0.1800
  • 500 $0.1750
  • 1,000 $0.1710
$0.1710 / $0.4470 Buy Now
DISTI # 45J2159
Newark P Channel Mosfet, -20V, 4.2A, Sc-88, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:1W Rohs Compliant: Yes |Onsemi NTJS4151PT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.1060
  • 6,000 $0.1060
  • 12,000 $0.1050
$0.1050 / $0.1060 Buy Now
DISTI # NTJS4151PT1G
Avnet Americas Power MOSFET, P Channel, 20 V, 3.3 A, 60 MilliOhms, SC-88 (SOT-363), 6 Pins, Surface Mount - Tape and Reel (Alt: NTJS4151PT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 3000
  • 3,000 $0.0813
  • 6,000 $0.0804
  • 12,000 $0.0794
  • 18,000 $0.0790
  • 24,000 $0.0785
$0.0785 / $0.0813 Buy Now
DISTI # 09R9658
Avnet Americas Power MOSFET, P Channel, 20 V, 3.3 A, 60 MilliOhms, SC-88 (SOT-363), 6 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 09R9658) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 72 Weeks, 1 Days Container: Ammo Pack 19346 Partner Stock
  • 1 $0.1360
  • 25 $0.2900
  • 50 $0.2360
  • 100 $0.1810
  • 250 $0.1630
$0.1360 / $0.2900 Buy Now
Bristol Electronics   3000
RFQ
Bristol Electronics   3000
RFQ
Bristol Electronics   50
RFQ
Rochester Electronics NTJS4151P - Small Signal Field-Effect Transistor, 3.3A, 20V, P-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 51088
  • 1 $0.0926
  • 25 $0.0907
  • 100 $0.0870
  • 500 $0.0833
  • 1,000 $0.0787
$0.0787 / $0.0926 Buy Now
DISTI # NTJS4151PT1G
TME Transistor: P-MOSFET, unipolar, -20V, -2.4A, 1W Min Qty: 1 820
  • 1 $0.3410
  • 10 $0.2290
  • 50 $0.1790
  • 100 $0.1110
  • 1,000 $0.1020
  • 1,500 $0.0970
  • 3,000 $0.0940
$0.0940 / $0.3410 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock DE - 0
Stock ES - 4109
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # NTJS4151PT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 9000 0
  • 9,000 $0.0800
$0.0800 Buy Now
DISTI # NTJS4151PT1G
Avnet Asia Power MOSFET, P Channel, 20 V, 3.3 A, 60 MilliOhms, SC-88 (SOT-363), 6 Pins, Surface Mount (Alt: NTJS4151PT1G) RoHS: Compliant Min Qty: 12000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days 0
  • 12,000 $0.0780
  • 24,000 $0.0770
  • 36,000 $0.0760
  • 60,000 $0.0751
  • 120,000 $0.0732
  • 300,000 $0.0714
  • 600,000 $0.0698
$0.0698 / $0.0780 Buy Now
DISTI # NTJS4151PT1G
Avnet Silica Power MOSFET P Channel 20 V 33 A 60 MilliOhms SC88 SOT363 6 Pins Surface Mount (Alt: NTJS4151PT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Silica - 108000
Buy Now
DISTI # C1S541900409279
Chip One Stop MOSFET RoHS: Compliant Container: Cut Tape 388
  • 10 $0.2510
  • 50 $0.2490
  • 100 $0.1360
  • 200 $0.1240
$0.1240 / $0.2510 Buy Now
DISTI # C1S541901213420
Chip One Stop Trans MOSFET P-CH 20V 3.3A 6-Pin SC-88 T/R RoHS: Compliant Container: Cut Tape 25
  • 5 $0.3690
$0.3690 Buy Now
DISTI # NTJS4151PT1G
EBV Elektronik Power MOSFET P Channel 20 V 33 A 60 MilliOhms SC88 SOT363 6 Pins Surface Mount (Alt: NTJS4151PT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation P-Channel 20 V 47 mOhm 1 W Surface Mount Trench Power MOSFET - SOT-363 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 72000
  • 3,000 $0.1139
  • 72,000 $0.1063
$0.1063 / $0.1139 Buy Now
Win Source Electronics MOSFET P-CH 20V 3.3A SC-88 138000
  • 415 $0.1217
  • 880 $0.1139
  • 1,365 $0.1100
  • 1,960 $0.1021
  • 2,550 $0.0982
  • 3,185 $0.0943
$0.0943 / $0.1217 Buy Now

Part Details for NTJS4151PT1G

NTJS4151PT1G CAD Models

NTJS4151PT1G Part Data Attributes

NTJS4151PT1G onsemi
Buy Now Datasheet
Compare Parts:
NTJS4151PT1G onsemi Single P−Channel Trench Power MOSFET -20V -4.2A 60mΩ, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SC-88/SC70-6/SOT-363 6 LEAD
Package Description SC-88, SC-70-6, 6 PIN
Pin Count 6
Manufacturer Package Code 419B-02
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 72 Weeks, 1 Day
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.3 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

NTJS4151PT1G Related Parts

NTJS4151PT1G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power dissipation at high temperatures.

  • The maximum allowed voltage on the input pins is 5.5V, which is the absolute maximum rating. However, for reliable operation, it's recommended to keep the input voltage below 5V.

  • Yes, the NTJS4151PT1G is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, ensure that you follow the recommended operating conditions and design guidelines.

  • The NTJS4151PT1G has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during manufacturing and assembly. Use ESD-protective packaging, wrist straps, and mats to prevent damage.

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