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Transistors / Power Field-Effect Transistors / NTMFD5C680NLT1G
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NTMFD5C680NLT1G by: onsemi

Dual N-Channel Power MOSFET 60V, 26A, 28mΩ, 1500-REEL

Part Details for NTMFD5C680NLT1G by onsemi

Overview of NTMFD5C680NLT1G by onsemi

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Price & Stock for NTMFD5C680NLT1G

Part # Distributor Description Stock Price Buy
DISTI # 62AC7359
Newark Mosfet, Dual N-Ch, 60V, 26A, Dfn, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:26A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.023Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Rohs Compliant: Yes |Onsemi NTMFD5C680NLT1G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1310
  • 1 $2.8900
  • 10 $2.2800
  • 25 $2.1500
  • 50 $2.0400
  • 100 $1.9100
  • 250 $1.7700
  • 500 $1.6000
  • 1,000 $1.3700
$1.3700 / $2.8900 Buy Now
DISTI # NTMFD5C680NLT1GOSCT-ND
DigiKey MOSFET 2N-CH 60V 7.5A/26A 8DFN Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1500
In Stock
  • 1 $0.9600
  • 10 $0.7890
  • 100 $0.6134
  • 500 $0.5199
  • 1,500 $0.4235
  • 3,000 $0.3987
  • 7,500 $0.3797
  • 10,500 $0.3622
$0.3622 / $0.9600 Buy Now
DISTI # NTMFD5C680NLT1G
Avnet Americas MOSFET Array Dual N-CH 60V 26A 8-Pin DFN T/R - Tape and Reel (Alt: NTMFD5C680NLT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4338
  • 6,000 $0.4222
  • 9,000 $0.4107
  • 15,000 $0.3991
  • 30,000 $0.3875
$0.3875 / $0.4338 Buy Now
DISTI # 863-NTMFD5C680NLT1G
Mouser Electronics MOSFET T6 60V LL SO8FL DUAL RoHS: Compliant 11965
  • 1 $0.9600
  • 10 $0.7890
  • 100 $0.6140
  • 500 $0.5200
  • 1,500 $0.4230
$0.4230 / $0.9600 Buy Now
DISTI # NTMFD5C680NLT1G
Avnet Americas MOSFET Array Dual N-CH 60V 26A 8-Pin DFN T/R - Tape and Reel (Alt: NTMFD5C680NLT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4338
  • 6,000 $0.4222
  • 9,000 $0.4107
  • 15,000 $0.3991
  • 30,000 $0.3875
$0.3875 / $0.4338 Buy Now
DISTI # NTMFD5C680NLT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $0.3600
$0.3600 Buy Now
DISTI # 2895709
element14 Asia-Pacific MOSFET, DUAL N-CH, 60V, 26A, DFN RoHS: Compliant Min Qty: 1 Container: Cut Tape 1310
  • 1 $2.9624
  • 10 $2.4675
  • 100 $1.9651
  • 500 $1.6622
$1.6622 / $2.9624 Buy Now
DISTI # 2895709RL
element14 Asia-Pacific MOSFET, DUAL N-CH, 60V, 26A, DFN RoHS: Compliant Min Qty: 100 Container: Reel 1310
  • 100 $1.9651
  • 500 $1.6622
$1.6622 / $1.9651 Buy Now
DISTI # 2895709
Farnell MOSFET, DUAL N-CH, 60V, 26A, DFN RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Cut Tape 1310
  • 1 $3.1543
  • 10 $2.2155
  • 100 $1.7023
  • 500 $1.6147
  • 1,500 $1.5271
  • 3,000 $1.4395
  • 4,500 $1.3519
$1.3519 / $3.1543 Buy Now
DISTI # 2895709RL
Farnell MOSFET, DUAL N-CH, 60V, 26A, DFN RoHS: Compliant Min Qty: 100 Lead time: 16 Weeks, 1 Days Container: Reel 1310
  • 100 $1.7023
  • 500 $1.6147
  • 1,500 $1.5271
  • 3,000 $1.4395
  • 4,500 $1.3519
$1.3519 / $1.7023 Buy Now

Part Details for NTMFD5C680NLT1G

NTMFD5C680NLT1G CAD Models

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NTMFD5C680NLT1G Part Data Attributes:

Parametric Data
NTMFD5C680NLT1G onsemi
Buy Now Datasheet
Compare Parts:
NTMFD5C680NLT1G onsemi Dual N-Channel Power MOSFET 60V, 26A, 28mΩ, 1500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 506BT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 65 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 47 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 0.041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 19 W
Pulsed Drain Current-Max (IDM) 57 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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