Datasheets
NTMFS4833NT3G by:

MOSFET, Single N-Channel 30V, 191A, 2mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL

Part Details for NTMFS4833NT3G by onsemi

Overview of NTMFS4833NT3G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NTMFS4833NT3G

Part # Distributor Description Stock Price Buy
DISTI # 27M2753
Newark N Channel Mosfet, 30V, 191A, Dfn5, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:191A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5Vrohs Compliant: Yes |Onsemi NTMFS4833NT3G Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 09R9667
Newark N Channel Mosfet, 30V, 191A, Dfn5, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:191A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Onsemi NTMFS4833NT3G Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
Bristol Electronics   4039
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 30V, 0.003OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 3231
  • 1 $2.0864
  • 623 $0.8606
  • 1,163 $0.7824
$0.7824 / $2.0864 Buy Now
Chip 1 Exchange INSTOCK 1740
RFQ
Chip1Cloud Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL 8000
RFQ
DISTI # 3616390
Farnell MOSFET, N-CH, 30V, 191A, 150DEG C, 125W RoHS: Compliant Min Qty: 5000 Lead time: 11 Weeks, 1 Days Container: Reel 0
  • 5,000 $0.8166
$0.8166 Buy Now

Part Details for NTMFS4833NT3G

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NTMFS4833NT3G Part Data Attributes:

NTMFS4833NT3G onsemi
Buy Now Datasheet
Compare Parts:
NTMFS4833NT3G onsemi MOSFET, Single N-Channel 30V, 191A, 2mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code DFN5 5X6, 1.27P (SO 8FL)
Package Description 6 X 5 MM, LEAD FREE, CASE 488AA-01, DFN5, SO-8FL, 6 PIN
Pin Count 5
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 612.5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.003 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 288 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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