Datasheets
NTMTS1D5N08H by: onsemi

Single N-Channel Power MOSFET 80V, 255A, 1.5mΩ, PQFN 8x8, 3000-REEL

Part Details for NTMTS1D5N08H by onsemi

Overview of NTMTS1D5N08H by onsemi

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Applications Aerospace and Defense

Price & Stock for NTMTS1D5N08H

Part # Distributor Description Stock Price Buy
DISTI # 488-NTMTS1D5N08HCT-ND
DigiKey T8-80V IN PQFN88 FOR INDU Min Qty: 1 Lead time: 31 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3000
In Stock
  • 1 $5.0700
  • 10 $4.2550
  • 100 $3.4426
  • 500 $3.0601
  • 1,000 $2.6202
  • 3,000 $2.4672
$2.4672 / $5.0700 Buy Now
DISTI # NTMTS1D5N08H
Avnet Americas Power MOSFET, N Channel, 80 V, 255 A, 0.0015 ohm, DFNW, Surface Mount - Tape and Reel (Alt: NTMTS1D5N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days Container: Reel 9000 Factory Stock
  • 3,000 $2.8404
  • 6,000 $2.7647
  • 12,000 $2.6889
  • 18,000 $2.6132
  • 24,000 $2.5374
$2.5374 / $2.8404 Buy Now
DISTI # NTMTS1D5N08H
Avnet Americas Power MOSFET, N Channel, 80 V, 255 A, 0.0015 ohm, DFNW, Surface Mount - Tape and Reel (Alt: NTMTS1D5N08H) RoHS: Compliant Min Qty: 221 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 9000 Partner Stock
  • 221 $3.3596
  • 230 $3.2688
  • 450 $3.1780
  • 1,200 $3.0872
  • 2,300 $2.9964
  • 12,000 $2.9056
  • 23,000 $2.8148
$2.8148 / $3.3596 Buy Now
DISTI # 863-NTMTS1D5N08H
Mouser Electronics MOSFET T8-80V IN PQFN88 FOR INDUSTRIAL MARKET 0
  • 3,000 $2.4600
$2.4600 Order Now
DISTI # NTMTS1D5N08H
Avnet Americas Power MOSFET, N Channel, 80 V, 255 A, 0.0015 ohm, DFNW, Surface Mount - Tape and Reel (Alt: NTMTS1D5N08H) RoHS: Compliant Min Qty: 221 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 9000 Partner Stock
  • 221 $3.3596
  • 230 $3.2688
  • 450 $3.1780
  • 1,200 $3.0872
  • 2,300 $2.9964
  • 12,000 $2.9056
  • 23,000 $2.8148
$2.8148 / $3.3596 Buy Now
DISTI # NTMTS1D5N08H
Avnet Americas Power MOSFET, N Channel, 80 V, 255 A, 0.0015 ohm, DFNW, Surface Mount - Tape and Reel (Alt: NTMTS1D5N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days Container: Reel 9000 Factory Stock
  • 3,000 $2.8404
  • 6,000 $2.7647
  • 12,000 $2.6889
  • 18,000 $2.6132
  • 24,000 $2.5374
$2.5374 / $2.8404 Buy Now
DISTI # NTMTS1D5N08H
Avnet Americas Power MOSFET, N Channel, 80 V, 255 A, 0.0015 ohm, DFNW, Surface Mount - Tape and Reel (Alt: NTMTS1D5N08H) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 31 Weeks, 0 Days Container: Reel 9000 Factory Stock
  • 3,000 $2.8404
  • 6,000 $2.7647
  • 12,000 $2.6889
  • 18,000 $2.6132
  • 24,000 $2.5374
$2.5374 / $2.8404 Buy Now
DISTI # NTMTS1D5N08H
Avnet Americas Power MOSFET, N Channel, 80 V, 255 A, 0.0015 ohm, DFNW, Surface Mount - Tape and Reel (Alt: NTMTS1D5N08H) RoHS: Compliant Min Qty: 221 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 9000 Partner Stock
  • 221 $3.3596
  • 230 $3.2688
  • 450 $3.1780
  • 1,200 $3.0872
  • 2,300 $2.9964
  • 12,000 $2.9056
  • 23,000 $2.8148
$2.8148 / $3.3596 Buy Now
Flip Electronics Stock, ship today 9000
  • 1 $2.5000
$2.5000 RFQ

Part Details for NTMTS1D5N08H

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NTMTS1D5N08H Part Data Attributes

NTMTS1D5N08H onsemi
Buy Now Datasheet
Compare Parts:
NTMTS1D5N08H onsemi Single N-Channel Power MOSFET 80V, 255A, 1.5mΩ, PQFN 8x8, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 507AP
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 34 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1536 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 255 A
Drain-source On Resistance-Max 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 31 pF
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Pulsed Drain Current-Max (IDM) 900 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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