There are no models available for this part yet.
Overview of NTP90N02G by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for NTP90N02G by onsemi
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
74AK1170
|
Newark | Ntp90N02G, Single Mosfets |Onsemi NTP90N02G RoHS: Not Compliant Min Qty: 1340 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.2450 / $0.3120 | Buy Now | |
DISTI #
NTP90N02G
|
Avnet Americas | - Rail/Tube (Alt: NTP90N02G) RoHS: Compliant Min Qty: 1336 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 4645 Partner Stock |
|
$0.2321 / $0.2771 | Buy Now | |
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 24V, 0.0058OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 19 |
|
$0.4353 / $0.5223 | Buy Now | ||
Rochester Electronics | NTP90N02 - 90A, 24V, 0.0058ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 4645 |
|
$0.2321 / $0.2730 | Buy Now |
CAD Models for NTP90N02G by onsemi
Part Data Attributes for NTP90N02G by onsemi
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
ONSEMI
|
Part Package Code
|
TO-220 3 LEAD STANDARD
|
Package Description
|
LEAD FREE, CASE 221A-09, 3 PIN
|
Pin Count
|
3
|
Manufacturer Package Code
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221A
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Reach Compliance Code
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not_compliant
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ECCN Code
|
EAR99
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HTS Code
|
8541.29.00.95
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Factory Lead Time
|
4 Weeks
|
Samacsys Manufacturer
|
onsemi
|
Avalanche Energy Rating (Eas)
|
733 mJ
|
Case Connection
|
DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
24 V
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Drain Current-Max (ID)
|
90 A
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Drain-source On Resistance-Max
|
0.0058 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-220AB
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JESD-30 Code
|
R-PSFM-T3
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JESD-609 Code
|
e3
|
Number of Elements
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1
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Number of Terminals
|
3
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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Package Body Material
|
PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel)
|
260
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
|
85 W
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Pulsed Drain Current-Max (IDM)
|
200 A
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Qualification Status
|
Not Qualified
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Surface Mount
|
NO
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Terminal Finish
|
Tin (Sn)
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Terminal Form
|
THROUGH-HOLE
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Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|