Datasheets
NTR3A30PZT1G by: onsemi

Single P-Channel Power MOSFET -20V, -2.9A, 38mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL

Part Details for NTR3A30PZT1G by onsemi

Results Overview of NTR3A30PZT1G by onsemi

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NTR3A30PZT1G Information

NTR3A30PZT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NTR3A30PZT1G

Part # Distributor Description Stock Price Buy
DISTI # 81Y7055
Newark Mosfet, P-Ch, -20V, -3A, Sot-23-3, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:-4.5V, Gate Source Threshold Voltage Max:-650Mv Rohs Compliant: Yes |Onsemi NTR3A30PZT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 86AK5851
Newark Mosfet, P-Ch, 20V, 3A, Sot-23 Rohs Compliant: Yes |Onsemi NTR3A30PZT1G RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
Buy Now
Rochester Electronics NTR3A30PZ - Small Signal Field-Effect Transistor, P-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 4000
  • 1 $0.2521
  • 25 $0.2471
  • 100 $0.2370
  • 500 $0.2269
  • 1,000 $0.2143
$0.2143 / $0.2521 Buy Now
DISTI # NTR3A30PZT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ
DISTI # NTR3A30PZT1G
Avnet Silica Trans MOSFET PCH 20V 47A 3Pin SOT23 TR (Alt: NTR3A30PZT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NTR3A30PZT1G
EBV Elektronik Trans MOSFET PCH 20V 47A 3Pin SOT23 TR (Alt: NTR3A30PZT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 9000
RFQ

Part Details for NTR3A30PZT1G

NTR3A30PZT1G CAD Models

NTR3A30PZT1G Part Data Attributes

NTR3A30PZT1G onsemi
Buy Now Datasheet
Compare Parts:
NTR3A30PZT1G onsemi Single P-Channel Power MOSFET -20V, -2.9A, 38mΩ, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code SOT-23 (TO-236) 3 LEAD
Pin Count 3
Manufacturer Package Code 318
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE
Drain Current-Max (ID) 3 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.58 W
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) 30

NTR3A30PZT1G Related Parts

NTR3A30PZT1G Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.

  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.

  • Handle the device in an ESD-protected environment, wear an ESD strap, and use ESD-safe tools and materials to prevent damage. Avoid touching the device's pins or leads to prevent ESD damage.

  • Use a thermal imaging camera to detect hotspots, and check the device's voltage and current ratings. Verify the PCB layout and component placement, and check for any signs of physical damage or contamination.

  • The device is designed to meet the reliability and lifespan expectations of the automotive industry. It is rated for a minimum of 10 years of operation under normal conditions, with a failure rate of less than 10 FIT (failures per billion hours).

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