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Part Details for NTTFS004P02P8 by onsemi
Overview of NTTFS004P02P8 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NTTFS004P02P8
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NTTFS004P02P8
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Avnet Asia | Power MOSFET, P Channel, 20 V, 56 A, 4 Milliohms, PQFN, 8 Pins, Surface Mount (Alt: NTTFS004P02P8) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days | 0 |
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RFQ |
Part Details for NTTFS004P02P8
NTTFS004P02P8 CAD Models
NTTFS004P02P8 Part Data Attributes
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NTTFS004P02P8
onsemi
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Datasheet
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Compare Parts:
NTTFS004P02P8
onsemi
Power MOSFET, Single, P-Channel, -20V, -56A, 4mΩ, PQFN8 3x3 Power MOSFET, Single, P-Channel, -20V, 4m ohms, PQFN8 3x3, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Manufacturer Package Code | 483AX | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2010 pF | |
| JEDEC-95 Code | MO-240BA | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 377 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 791 ns | |
| Turn-on Time-Max (ton) | 162 ns |