Datasheets
NVBG110N65S3F by: onsemi

Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, D2PAK 7 lead SuperFET III 650V 110mohm D2PAK 7 Lead, 800-REEL, Automotive Qualified

Part Details for NVBG110N65S3F by onsemi

Overview of NVBG110N65S3F by onsemi

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Applications Consumer Electronics Internet of Things (IoT) Smart Cities

Price & Stock for NVBG110N65S3F

Part # Distributor Description Stock Price Buy
Flip Electronics Stock 29600
RFQ

Part Details for NVBG110N65S3F

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NVBG110N65S3F Part Data Attributes

NVBG110N65S3F onsemi
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NVBG110N65S3F onsemi Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, D2PAK 7 lead SuperFET III 650V 110mohm D2PAK 7 Lead, 800-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Active
Manufacturer Package Code 418BJ
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 380 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G7
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 240 W
Pulsed Drain Current-Max (IDM) 69 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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