Part Details for NVD5890NT4G-VF01 by onsemi
Overview of NVD5890NT4G-VF01 by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for NVD5890NT4G-VF01
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NVD5890NT4G-VF01
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Avnet Americas | Trans MOSFET N-CH 40V 123A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD5890NT4G-VF01) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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RFQ | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR | 2241 |
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$1.0500 / $2.5000 | Buy Now |
Part Details for NVD5890NT4G-VF01
NVD5890NT4G-VF01 CAD Models
NVD5890NT4G-VF01 Part Data Attributes
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NVD5890NT4G-VF01
onsemi
Buy Now
Datasheet
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Compare Parts:
NVD5890NT4G-VF01
onsemi
Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK., 2500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-05-03 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 240 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 123 A | |
| Drain-source On Resistance-Max | 0.0037 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 490 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 107 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NVD5890NT4G-VF01
This table gives cross-reference parts and alternative options found for NVD5890NT4G-VF01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVD5890NT4G-VF01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NVD5890NT4G | Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK. Power MOSFET 40 V, 100 A, Single N?Channel, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified | onsemi | NVD5890NT4G-VF01 vs NVD5890NT4G |