-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for NVH4L015N065SC1 by onsemi
Overview of NVH4L015N065SC1 by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for NVH4L015N065SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
81AJ0292
|
Newark | Sic Mos To247-4L 650V/ Tube |Onsemi NVH4L015N065SC1 Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$26.8100 | Buy Now |
|
DISTI #
5556-NVH4L015N065SC1-ND
|
DigiKey | SIC MOS TO247-4L 650V Min Qty: 1 Lead time: 17 Weeks Container: Tray |
350 In Stock |
|
$35.8840 / $47.5800 | Buy Now |
|
DISTI #
NVH4L015N065SC1
|
Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−4L - Rail/Tube (Alt: NVH4L015N065SC1) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Tube | 22501800 Factory Stock |
|
$24.4410 / $29.1715 | Buy Now |
|
DISTI #
863-NVH4L015N065SC1
|
Mouser Electronics | MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-4L RoHS: Compliant | 0 |
|
$34.0300 / $56.4500 | Order Now |
|
|
Future Electronics | N-Channel 650 V 142 A 500 W Through Hole SiC Power MOSFET - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 450Tube |
|
$35.1900 | Buy Now |
|
|
Future Electronics | N-Channel 650 V 142 A 500 W Through Hole SiC Power MOSFET - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
|
$35.1900 | Buy Now |
|
DISTI #
73581703
|
Verical | Trans MOSFET N-CH SiC 650V 142A 4-Pin(4+Tab) TO-247 Tube Automotive AEC-Q101 Min Qty: 450 Package Multiple: 450 Date Code: 2327 | Americas - 450 |
|
$32.4878 | Buy Now |
|
DISTI #
NVH4L015N065SC1
|
Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−4L - Rail/Tube (Alt: NVH4L015N065SC1) RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Tube | 22501800 Factory Stock |
|
$24.4410 / $29.1715 | Buy Now |
|
DISTI #
NVH4L015N065SC1
|
Richardson RFPD | SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 450 | 0 |
|
$24.6400 | Buy Now |
|
|
New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 450 | 900 |
|
$35.5200 / $38.0600 | Buy Now |
Part Details for NVH4L015N065SC1
NVH4L015N065SC1 CAD Models
NVH4L015N065SC1 Part Data Attributes:
|
|
NVH4L015N065SC1
onsemi
Buy Now
Datasheet
|
Compare Parts:
NVH4L015N065SC1
onsemi
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 12 mohm, 650V, M2, TO247−4L, 450-TUBE, Automotive Qualified
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, R-PSFM-T4 | |
| Manufacturer Package Code | 340CJ | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 25 Weeks | |
| Date Of Intro | 2020-03-27 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 164 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 39.33 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 753 W | |
| Pulsed Drain Current-Max (IDM) | 859 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for NVH4L015N065SC1
This table gives cross-reference parts and alternative options found for NVH4L015N065SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVH4L015N065SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| C3M0015065K | Power Field-Effect Transistor, | Cree, Inc. | NVH4L015N065SC1 vs C3M0015065K |
| NTH4L015N065SC1 | Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L, 450-TUBE | onsemi | NVH4L015N065SC1 vs NTH4L015N065SC1 |
| MSC015SMA070B | Power Field-Effect Transistor, 140A I(D), 700V, 0.019ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | NVH4L015N065SC1 vs MSC015SMA070B |