Datasheets
NVHL080N120SC1 by: onsemi

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified

Part Details for NVHL080N120SC1 by onsemi

Overview of NVHL080N120SC1 by onsemi

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for NVHL080N120SC1

Part # Distributor Description Stock Price Buy
DISTI # 99AC9420
Newark Mosfet, Aec-Q101, N-Ch, 1.2Kv, To-247 Rohs Compliant: Yes |Onsemi NVHL080N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2239
  • 1 $17.8300
  • 10 $15.9300
  • 25 $15.0300
  • 50 $15.0100
  • 100 $15.0000
  • 250 $14.9800
  • 900 $14.5600
$14.5600 / $17.8300 Buy Now
DISTI # NVHL080N120SC1OS-ND
DigiKey SICFET N-CH 1200V 44A TO247-3 Min Qty: 1 Container: Tube 365
Tube
  • 1 $15.4000
  • 10 $13.5690
  • 450 $10.6353
$10.6353 / $15.4000 Buy Now
DISTI # NVHL080N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3 - Rail/Tube (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 69 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube 493 Partner Stock
  • 69 $10.7892
  • 80 $10.4976
  • 140 $10.2060
  • 350 $9.9144
  • 690 $9.6228
  • 3,500 $9.3312
  • 6,900 $9.0396
$9.0396 / $10.7892 Buy Now
DISTI # NVHL080N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3 - Rail/Tube (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube 27000 Factory Stock
  • 30 $10.4226
  • 40 $10.1409
  • 70 $9.8592
  • 150 $9.5775
  • 300 $9.2958
  • 1,500 $9.0141
  • 3,000 $8.7325
$8.7325 / $10.4226 Buy Now
Rochester Electronics NVHL080N120SC1 - Silicon Carbide MOSFET, N-Channel, 1200V RoHS: Not Compliant Status: Active Min Qty: 1 8250
  • 1 $10.2700
  • 25 $10.0600
  • 100 $9.6500
  • 500 $9.2400
  • 1,000 $8.7300
$8.7300 / $10.2700 Buy Now
DISTI # NVHL080N120SC1
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 450 0
  • 450 $8.8000
$8.8000 Buy Now
DISTI # NVHL080N120SC1
EBV Elektronik Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-3 (Alt: NVHL080N120SC1) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 27493
  • 1 $7.2900
$7.2900 RFQ

Part Details for NVHL080N120SC1

NVHL080N120SC1 CAD Models

NVHL080N120SC1 Part Data Attributes

NVHL080N120SC1 onsemi
Buy Now Datasheet
Compare Parts:
NVHL080N120SC1 onsemi Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247−3, 450-TUBE, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ONSEMI
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Date Of Intro 2018-12-03
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 171 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 348 W
Pulsed Drain Current-Max (IDM) 136 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 61 ns
Turn-on Time-Max (ton) 25 ns

Alternate Parts for NVHL080N120SC1

This table gives cross-reference parts and alternative options found for NVHL080N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVHL080N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTHL080N120SC1A Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE onsemi NVHL080N120SC1 vs NTHL080N120SC1A
Part Number Description Manufacturer Compare
SCT2080KEGC11 Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN ROHM Semiconductor NVHL080N120SC1 vs SCT2080KEGC11
NTHL080N120SC1A Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L, 450-TUBE onsemi NVHL080N120SC1 vs NTHL080N120SC1A
MSC080SMA120B Power Field-Effect Transistor, 37A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc NVHL080N120SC1 vs MSC080SMA120B
SCT3080KLHRC11 Power Field-Effect Transistor, ROHM Semiconductor NVHL080N120SC1 vs SCT3080KLHRC11

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