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Transistors / Small Signal Field-Effect Transistors / NVJD5121NT1G
Datasheets
NVJD5121NT1G by: onsemi

Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω, SC-88-6 / SC-70-6 / SOT-363-6, 3000-REEL, Automotive Qualified

Part Details for NVJD5121NT1G by onsemi

Results Overview of NVJD5121NT1G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

NVJD5121NT1G Information

NVJD5121NT1G by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVJD5121NT1G

Part # Distributor Description Stock Price Buy
DISTI # 13AC3922
Newark Mosfet, Aec-Q101, Dual N-Ch, 60V, Sot-363, Channel Type:N Channel, Drain Source Voltage Vds N Channel:60V, Drain Source Voltage Vds P Channel:60V, Continuous Drain Current Id N Channel:295Ma, No. Of Pins:6Pins, Product Range:- Rohs Compliant: Yes |Onsemi NVJD5121NT1G RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 21150
  • 1 $0.2940
  • 10 $0.1870
  • 25 $0.1650
  • 50 $0.1440
  • 100 $0.1230
  • 250 $0.1190
  • 500 $0.1150
  • 1,000 $0.1120
$0.1120 / $0.2940 Buy Now
DISTI # 68X4423
Newark Nfet Sc88 60V 295Ma 1.6Oh/ Reel |Onsemi NVJD5121NT1G RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.0850
  • 12,000 $0.0740
  • 18,000 $0.0680
  • 30,000 $0.0600
$0.0600 / $0.0850 Buy Now
DISTI # NVJD5121NT1G
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SC-88 T/R - Tape and Reel (Alt: NVJD5121NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 60000
  • 3,000 $0.0561
  • 6,000 $0.0554
  • 12,000 $0.0550
  • 18,000 $0.0545
  • 24,000 $0.0541
$0.0541 / $0.0561 Buy Now
DISTI # NVJD5121NT1G
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SC-88 T/R - Tape and Reel (Alt: NVJD5121NT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 30,000 $0.0561
  • 60,000 $0.0554
  • 120,000 $0.0548
  • 180,000 $0.0545
  • 240,000 $0.0541
$0.0541 / $0.0561 Buy Now
DISTI # NVJD5121NT1G
Avnet Americas NFET SC88 60V 295MA 1.6OH - Tape and Reel (Alt: NVJD5121NT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 30,000 $0.0561
  • 60,000 $0.0554
  • 120,000 $0.0550
  • 180,000 $0.0545
  • 240,000 $0.0541
$0.0541 / $0.0561 Buy Now
Bristol Electronics   Min Qty: 17 2025
  • 17 $0.3000
  • 51 $0.1500
  • 335 $0.0900
  • 1,668 $0.0600
$0.0600 / $0.3000 Buy Now
Rochester Electronics NVJD5121N - Dual N-Channel Power MOSFET with ESD Protection 60V RoHS: Compliant Status: Active Min Qty: 1 9000
  • 1 $0.0639
  • 25 $0.0626
  • 100 $0.0601
  • 500 $0.0575
  • 1,000 $0.0543
$0.0543 / $0.0639 Buy Now
DISTI # NVJD5121NT1G
TME Transistor: N-MOSFET x2, unipolar, 60V, 0.212A, 0.25W Min Qty: 10 210
  • 10 $0.1280
  • 25 $0.1100
  • 100 $0.0980
  • 500 $0.0880
  • 3,000 $0.0820
$0.0820 / $0.1280 Buy Now
DISTI # SMC-NVJD5121NT1G
Sensible Micro Corporation Trans Mosfet N-Ch 60V 0.3A Automotive 6-Pin Sot-363 T/R RoHS: Compliant Min Qty: 3000 Lead time: 0 Weeks, 1 Days Date Code: 1617 Container: Tape & Reel 3000
  • 100 $0.0585
  • 500 $0.0570
  • 1,000 $0.0540
$0.0540 / $0.0585 RFQ
DISTI # NVJD5121NT1G
Avnet Asia Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SC-88 T/R (Alt: NVJD5121NT1G) RoHS: Compliant Min Qty: 30000 Package Multiple: 30000 Lead time: 20 Weeks, 0 Days 0
  • 30,000 $0.0605
  • 60,000 $0.0597
  • 90,000 $0.0590
  • 150,000 $0.0582
  • 300,000 $0.0568
  • 750,000 $0.0554
  • 1,500,000 $0.0541
$0.0541 / $0.0605 Buy Now
DISTI # NVJD5121NT1G
Avnet Silica Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SC-88 T/R (Alt: NVJD5121NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Silica - 6000
Buy Now
DISTI # NVJD5121NT1G
EBV Elektronik Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SC-88 T/R (Alt: NVJD5121NT1G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days EBV - 18000
Buy Now
Flip Electronics Stock, ship today 18000
RFQ
LCSC 60V 295mA 1.610V 250mW 2.5V 2 N-Channel SC-88 MOSFETs ROHS 15
  • 5 $0.1803
  • 50 $0.1405
  • 150 $0.1234
  • 500 $0.1021
  • 3,000 $0.0926
  • 6,000 $0.0870
$0.0870 / $0.1803 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 15000
  • 3,000 $0.2339
  • 15,000 $0.2164
$0.2164 / $0.2339 Buy Now
Win Source Electronics MOSFET 2N-CH 60V 0.295A SC88 / Mosfet Array 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363 29600
  • 390 $0.1297
  • 825 $0.1214
  • 1,280 $0.1172
  • 1,840 $0.1088
  • 2,395 $0.1046
  • 2,990 $0.1005
$0.1005 / $0.1297 Buy Now

Part Details for NVJD5121NT1G

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NVJD5121NT1G Part Data Attributes

Parametric Data
NVJD5121NT1G onsemi
Buy Now Datasheet
Compare Parts:
NVJD5121NT1G onsemi Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω, SC-88-6 / SC-70-6 / SOT-363-6, 3000-REEL, Automotive Qualified
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SC-88-6 / SC-70-6 / SOT-363-6
Package Description SC-88, SC-70, SOT-363, 6 PIN
Manufacturer Package Code 419B-02
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.295 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2.5 pF
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.25 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

NVJD5121NT1G Related Parts

NVJD5121NT1G Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the package.

  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.

  • The input signals should meet the following timing requirements: input rise and fall times < 5 ns, input pulse width > 10 ns, and input frequency < 100 kHz.

  • Implement ESD protection using TVS diodes or ESD arrays on the input lines. Ensure the protection devices are rated for the maximum expected voltage and current.

  • Power up the device in the following sequence: VCC, then VIN, and finally the input signals. Ensure a monotonic power-up sequence to prevent latch-up.

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