There are no models available for this part yet.
Overview of NVMFS6B03NLWFT3G by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for NVMFS6B03NLWFT3G by onsemi
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
NVMFS6B03NLWFT3G
|
Avnet Americas | ONSNVMFS6B03NLWFT3G - Tape and Reel (Alt: NVMFS6B03NLWFT3G) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0 |
|
RFQ | ||
DISTI #
NVMFS6B03NLWFT3G
|
Avnet Silica | (Alt: NVMFS6B03NLWFT3G) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 50 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
CAD Models for NVMFS6B03NLWFT3G by onsemi
Part Data Attributes for NVMFS6B03NLWFT3G by onsemi
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
Package Description
|
SO-8FL, DFN5, 6 PIN
|
Manufacturer Package Code
|
488AA
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
onsemi
|
Avalanche Energy Rating (Eas)
|
180 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
|
Drain Current-Max (ID)
|
145 A
|
Drain-source On Resistance-Max
|
0.006 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PDSO-F5
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
5
|
Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
175 °C
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Operating Temperature-Min
|
-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
198 W
|
Pulsed Drain Current-Max (IDM)
|
520 A
|
Reference Standard
|
AEC-Q101
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
FLAT
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Element Material
|
SILICON
|
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