There are no models available for this part yet.
Overview of NVMJD012N06CLTWG by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 7 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Computing and Data Storage
Price & Stock for NVMJD012N06CLTWG by onsemi
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
57AK8623
|
Newark | T6 60V N-Ch Ll In Lfpak56 Duals Package/ Reel |Onsemi NVMJD012N06CLTWG RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6800 / $0.8590 | Buy Now | |
DISTI #
488-NVMJD012N06CLTWGCT-ND
|
DigiKey | MOSFET 2N-CH 60V 11.5A 8LFPAK Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.6859 / $1.6200 | Buy Now | |
DISTI #
NVMJD012N06CLTWG
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 42A 8-Pin LFPAK T/R - Tape and Reel (Alt: NVMJD012N06CLTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
|
$0.6838 | Buy Now | |
DISTI #
863-NVMJD012N06CLTWG
|
Mouser Electronics | MOSFETs Dual N-Channel Power MOSFET 60V, 42A, 11.9mohm RoHS: Compliant | 0 |
|
$0.6850 / $0.7050 | Order Now | |
Onlinecomponents.com | Transistor MOSFET Array Dual N-CH 60V 42A 8-Pin LFPAK T/R RoHS: Compliant | 0 |
|
$0.6740 / $1.4130 | Buy Now | ||
DISTI #
NVMJD012N06CLTWG
|
Avnet Silica | Transistor MOSFET Array Dual N-CH 60V 42A 8-Pin LFPAK T/R (Alt: NVMJD012N06CLTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | Silica - 0 |
|
Buy Now | ||
DISTI #
NVMJD012N06CLTWG
|
EBV Elektronik | Transistor MOSFET Array Dual N-CH 60V 42A 8-Pin LFPAK T/R (Alt: NVMJD012N06CLTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for NVMJD012N06CLTWG by onsemi
Part Data Attributes for NVMJD012N06CLTWG by onsemi
|
|
---|---|
Pbfree Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
ONSEMI
|
Manufacturer Package Code
|
760AF
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
14 Weeks
|
Samacsys Manufacturer
|
onsemi
|
Avalanche Energy Rating (Eas)
|
105 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
42 A
|
Drain-source On Resistance-Max
|
0.0168 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
8 pF
|
JESD-30 Code
|
R-PSSO-G4
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
2
|
Number of Terminals
|
4
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
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PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
42 W
|
Pulsed Drain Current-Max (IDM)
|
153 A
|
Reference Standard
|
AEC-Q101
|
Surface Mount
|
YES
|
Terminal Finish
|
Matte Tin (Sn) - annealed
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Element Material
|
SILICON
|