Part Details for NVMTS1D1N04CTXG by onsemi
Overview of NVMTS1D1N04CTXG by onsemi
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Security and Surveillance
Internet of Things (IoT)
Transportation and Logistics
Automotive
Robotics and Drones
Price & Stock for NVMTS1D1N04CTXG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
488-NVMTS1D1N04CTXGCT-ND
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DigiKey | T6 40V SL AIZU SINGLE NCH PQFN 8 Min Qty: 1 Lead time: 33 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$3.6796 / $6.9200 | Buy Now |
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DISTI #
NVMTS1D1N04CTXG
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Avnet Americas | Transistor MOSFET N-CH 40V 277A 8-Pin DFNW T/R - Tape and Reel (Alt: NVMTS1D1N04CTXG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 33 Weeks, 0 Days Container: Reel | 0 |
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$3.8592 / $4.3200 | Buy Now |
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DISTI #
863-NVMTS1D1N04CTXG
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Mouser Electronics | MOSFET T6 40V SL AIZU, SINGLE NCH, PQFN 8X8 RoHS: Compliant | 0 |
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$4.0100 | Order Now |
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Rochester Electronics | NVMTS1D1N04C - Power MOSFET 40V, 277 A, Single N-Channel RoHS: Compliant Status: Active Min Qty: 1 | 3000 |
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$3.5700 / $4.2000 | Buy Now |
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DISTI #
NVMTS1D1N04CTXG
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Avnet Americas | Transistor MOSFET N-CH 40V 277A 8-Pin DFNW T/R - Tape and Reel (Alt: NVMTS1D1N04CTXG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 33 Weeks, 0 Days Container: Reel | 0 |
|
$3.8592 / $4.3200 | Buy Now |
|
DISTI #
NVMTS1D1N04CTXG
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Avnet Americas | Transistor MOSFET N-CH 40V 277A 8-Pin DFNW T/R - Tape and Reel (Alt: NVMTS1D1N04CTXG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 33 Weeks, 0 Days Container: Reel | 0 |
|
$3.8592 / $4.3200 | Buy Now |
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Chip 1 Exchange | INSTOCK | 7735 |
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RFQ | |
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Wuhan P&S | 40V,1.1m��,277A,N-Channel Power MOSFET Min Qty: 1 | 3000 |
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$4.8600 / $10.0400 | Buy Now |
Part Details for NVMTS1D1N04CTXG
NVMTS1D1N04CTXG CAD Models
NVMTS1D1N04CTXG Part Data Attributes
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NVMTS1D1N04CTXG
onsemi
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Datasheet
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Compare Parts:
NVMTS1D1N04CTXG
onsemi
Power MOSFET 40V, 1.1 mΩ, 277 A, Single N−Channel Power MOSFET 40V, 1.1 mΩ, 277 A, Single N−Channel, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DFNW-8 | |
| Manufacturer Package Code | 507AP | |
| Reach Compliance Code | not_compliant | |
| Factory Lead Time | 72 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 721 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 277 A | |
| Drain-source On Resistance-Max | 0.0011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 82 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 153 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |