Part Details for NVMYS1D3N04CTWG by onsemi
Overview of NVMYS1D3N04CTWG by onsemi
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Security and Surveillance
Audio and Video Systems
Transportation and Logistics
Energy and Power Systems
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for NVMYS1D3N04CTWG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NVMYS1D3N04CTWGOSCT-ND
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DigiKey | TRENCH 6 40V SL NFET Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
12145 In Stock |
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$0.9000 / $1.5100 | Buy Now |
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DISTI #
NVMYS1D3N04CTWG
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Avnet Americas | Transistor MOSFET N-CH 40V 43A 5-Pin LFPAK T/R - Tape and Reel (Alt: NVMYS1D3N04CTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 12000 Factory Stock |
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$0.8928 / $1.0656 | Buy Now |
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DISTI #
NVMYS1D3N04CTWG
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Avnet Americas | Transistor MOSFET N-CH 40V 43A 5-Pin LFPAK T/R - Tape and Reel (Alt: NVMYS1D3N04CTWG) RoHS: Compliant Min Qty: 770 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 12000 Partner Stock |
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$0.8060 / $0.9620 | Buy Now |
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DISTI #
863-NVMYS1D3N04CTWG
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Mouser Electronics | MOSFET TRENCH 6 40V SL NFET RoHS: Compliant | 1016 |
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$0.8780 / $1.1600 | Buy Now |
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Rochester Electronics | NVMYS1D3N04C - N-Channel, MOSFET - Power RoHS: Compliant Status: Active Min Qty: 1 | 15000 |
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$0.8925 / $1.0500 | Buy Now |
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DISTI #
NVMYS1D3N04CTWG
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Avnet Americas | Transistor MOSFET N-CH 40V 43A 5-Pin LFPAK T/R - Tape and Reel (Alt: NVMYS1D3N04CTWG) RoHS: Compliant Min Qty: 770 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 12000 Partner Stock |
|
$0.8060 / $0.9620 | Buy Now |
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DISTI #
NVMYS1D3N04CTWG
|
Avnet Americas | Transistor MOSFET N-CH 40V 43A 5-Pin LFPAK T/R - Tape and Reel (Alt: NVMYS1D3N04CTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 12000 Factory Stock |
|
$0.8928 / $1.0656 | Buy Now |
|
DISTI #
NVMYS1D3N04CTWG
|
Avnet Americas | Transistor MOSFET N-CH 40V 43A 5-Pin LFPAK T/R - Tape and Reel (Alt: NVMYS1D3N04CTWG) RoHS: Compliant Min Qty: 770 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 12000 Partner Stock |
|
$0.8060 / $0.9620 | Buy Now |
|
DISTI #
NVMYS1D3N04CTWG
|
Avnet Americas | Transistor MOSFET N-CH 40V 43A 5-Pin LFPAK T/R - Tape and Reel (Alt: NVMYS1D3N04CTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days Container: Reel | 12000 Factory Stock |
|
$0.8928 / $1.0656 | Buy Now |
|
DISTI #
NVMYS1D3N04CTWG
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Avnet Silica | Transistor MOSFET N-CH 40V 43A 5-Pin LFPAK T/R (Alt: NVMYS1D3N04CTWG) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 2 Weeks, 1 Days | Silica - 0 |
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Buy Now |
Part Details for NVMYS1D3N04CTWG
NVMYS1D3N04CTWG CAD Models
NVMYS1D3N04CTWG Part Data Attributes
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NVMYS1D3N04CTWG
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMYS1D3N04CTWG
onsemi
Power MOSFET, Single N-Channel, 40 V, 1.15Ω, 252 A, 3000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | LFPAK-4 | |
| Manufacturer Package Code | 760AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 65 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1621 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 252 A | |
| Drain-source On Resistance-Max | 0.00115 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 134 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for NVMYS1D3N04CTWG
This table gives cross-reference parts and alternative options found for NVMYS1D3N04CTWG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVMYS1D3N04CTWG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTMYS1D3N04CTWG | Power MOSFET, Single N-Channel, 40 V, 1.15mΩ, 252 A, 3000-REEL | onsemi | NVMYS1D3N04CTWG vs NTMYS1D3N04CTWG |