Datasheets
NVTFS5C658NLWFTAG by: onsemi

Single N-Channel Power MOSFET 60V, 109A, 5.0mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks, WDFNW8 3.3x3.3, 0.65P (Full−Cut ?8FL WF), 1500-REEL, Automotive Qualified

Part Details for NVTFS5C658NLWFTAG by onsemi

Results Overview of NVTFS5C658NLWFTAG by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

NVTFS5C658NLWFTAG Information

NVTFS5C658NLWFTAG by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for NVTFS5C658NLWFTAG

Part # Distributor Description Stock Price Buy
DISTI # 18AC0091
Newark Mosfet, Aec-Q101, N-Ch, 60V, Wdfn, Transistor Polarity:N Channel, Continuous Drain Current Id:109A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Rohs Compliant: Yes |Onsemi NVTFS5C658NLWFTAG RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1301
  • 1 $2.0100
  • 10 $1.3700
  • 25 $1.2400
  • 50 $1.1000
  • 100 $0.9700
  • 250 $0.8830
  • 500 $0.7960
$0.7960 / $2.0100 Buy Now
DISTI # 31AC1211
Newark Afsm T6 60V Ll U8Fl Wf/ Reel Rohs Compliant: Yes |Onsemi NVTFS5C658NLWFTAG RoHS: Compliant Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,000 $0.9190
  • 2,500 $0.7420
  • 10,000 $0.7200
$0.7200 / $0.9190 Buy Now
DISTI # NVTFS5C658NLWFTAG
Avnet Americas Transistor MOSFET N-CH 60V 109A 8-Pin WDFN T/R - Tape and Reel (Alt: NVTFS5C658NLWFTAG) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 17 Weeks, 0 Days Container: Reel 31076 Factory Stock
  • 1,500 $0.6754
  • 3,000 $0.6671
  • 6,000 $0.6615
  • 9,000 $0.6560
  • 12,000 $0.6510
$0.6510 / $0.6754 Buy Now
DISTI # NVTFS5C658NLWFTAG
Avnet Asia Transistor MOSFET N-CH 60V 109A 8-Pin WDFN T/R (Alt: NVTFS5C658NLWFTAG) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 17 Weeks, 0 Days 7500
  • 1,500 $0.7284
  • 3,000 $0.7190
  • 4,500 $0.7097
  • 7,500 $0.7008
  • 15,000 $0.6835
  • 37,500 $0.6670
  • 75,000 $0.6513
$0.6513 / $0.7284 Buy Now
DISTI # NVTFS5C658NLWFTAG
Avnet Silica Transistor MOSFET NCH 60V 109A 8Pin WDFN TR (Alt: NVTFS5C658NLWFTAG) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 18 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NVTFS5C658NLWFTAG
EBV Elektronik Transistor MOSFET NCH 60V 109A 8Pin WDFN TR (Alt: NVTFS5C658NLWFTAG) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
LCSC 60V 109A 5m10V50A 114W 2.2V 1 N-channel WDFN-8(3x3) MOSFETs ROHS 30
  • 1 $1.1530
  • 10 $1.1267
  • 30 $1.1082
  • 100 $1.0896
$1.0896 / $1.1530 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1500 115500
  • 1,500 $0.8786
  • 115,500 $0.8200
$0.8200 / $0.8786 Buy Now

Part Details for NVTFS5C658NLWFTAG

NVTFS5C658NLWFTAG CAD Models

NVTFS5C658NLWFTAG Part Data Attributes

NVTFS5C658NLWFTAG onsemi
Buy Now Datasheet
Compare Parts:
NVTFS5C658NLWFTAG onsemi Single N-Channel Power MOSFET 60V, 109A, 5.0mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks, WDFNW8 3.3x3.3, 0.65P (Full−Cut ?8FL WF), 1500-REEL, Automotive Qualified
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code WDFNW8 3.3x3.3, 0.65P (Full−Cut ?8FL WF)
Package Description WDFN-8
Manufacturer Package Code 515AN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Date Of Intro 2017-01-06
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 142 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.073 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 440 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for NVTFS5C658NLWFTAG

This table gives cross-reference parts and alternative options found for NVTFS5C658NLWFTAG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVTFS5C658NLWFTAG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NVTFS5C658NLTAG onsemi $0.9747 Single N-Channel Power MOSFET 60V, 109A, 5.0mΩ 1500 / Tape & Reel, WDFN-8 / u8FL, 1500-REEL, Automotive Qualified NVTFS5C658NLWFTAG vs NVTFS5C658NLTAG

NVTFS5C658NLWFTAG Related Parts

NVTFS5C658NLWFTAG Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Ensure that the device is operated within the recommended voltage and current limits, and that the PCB is designed to minimize thermal resistance. Also, consider using a thermal interface material (TIM) to improve heat transfer between the device and heat sink.

  • The critical timing parameters include the input rise and fall times, output delay, and propagation delay. These parameters are critical for ensuring reliable operation and should be carefully considered during design and layout.

  • The NVTFS5C658NLWFTAG has built-in ESD protection, but additional protection measures may be necessary depending on the application. Consider using external ESD protection devices or implementing ESD protection in the PCB design.

  • The recommended decoupling capacitor values are 0.1uF to 1uF, and they should be placed as close as possible to the device pins. The capacitors should be rated for the operating voltage and should have a low equivalent series resistance (ESR).

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