Part Details for NXH450B100H4Q2F2PG-R by onsemi
Overview of NXH450B100H4Q2F2PG-R by onsemi
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NXH450B100H4Q2F2PG-R
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
76AK6234
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Newark | 1000V,75A Fsiii Igbt, Mid Speed With Rugged Anti-Parallel Diodes In Press Fit Pins/ Btray |Onsemi NXH450B100H4Q2F2PG-R RoHS: Not Compliant Min Qty: 36 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$247.6400 | Buy Now |
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DISTI #
5556-NXH450B100H4Q2F2PG-R-ND
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DigiKey | 1000V75A FSIII IGBT MID SPEED WI Min Qty: 1 Lead time: 15 Weeks Container: Tray |
36 In Stock |
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$244.3869 / $271.1200 | Buy Now |
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DISTI #
NXH450B100H4Q2F2PG
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Avnet Americas | IGBT Module, Three Level Inverter, 101 A, 1.7 V, 234 W, 150 °C - Trays (Alt: NXH450B100H4Q2F2PG) RoHS: Not Compliant Min Qty: 36 Package Multiple: 36 Container: Tray | 0 |
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RFQ | |
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DISTI #
863-50B100H4Q2F2PG-R
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Mouser Electronics | IGBT Modules 1000V,75A FSIII IGBT, MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS RoHS: Compliant | 36 |
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$244.3600 / $271.0900 | Buy Now |
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Onlinecomponents.com | IGBT Module, Three Level Inverter, 101 A, 1.7 V, 234 W, 150 °C RoHS: Compliant | 0 |
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$242.0700 / $680.5300 | Buy Now |
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DISTI #
NXH450B100H4Q2F2PG-R
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Avnet Silica | IGBT Module, Three Level Inverter, 101 A, 1.7 V, 234 W, 150 �C (Alt: NXH450B100H4Q2F2PG-R) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 16 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
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DISTI #
NXH450B100H4Q2F2PG-R
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EBV Elektronik | IGBT Module, Three Level Inverter, 101 A, 1.7 V, 234 W, 150 �C (Alt: NXH450B100H4Q2F2PG-R) RoHS: Compliant Min Qty: 12 Package Multiple: 12 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NXH450B100H4Q2F2PG-R
NXH450B100H4Q2F2PG-R CAD Models
NXH450B100H4Q2F2PG-R Part Data Attributes
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NXH450B100H4Q2F2PG-R
onsemi
Buy Now
Datasheet
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Compare Parts:
NXH450B100H4Q2F2PG-R
onsemi
Insulated Gate Bipolar Transistor
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 101 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 5.7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X56 | |
| Number of Elements | 6 | |
| Number of Terminals | 56 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 234 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 179 ns | |
| Turn-on Time-Nom (ton) | 38 ns | |
| VCEsat-Max | 2.25 V |